BLF4G20-110B;
BLF4G20S-110B
UHF power LDMOS transistor
Rev. 01 — 23 January 2006
Product data sheet
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1:
Typical performance
f = 1930 MHz to 1990 MHz; T
case
= 25
°
C; in a class-AB production test circuit.
Mode of operation
V
DS
(V)
28
28
P
L
(W)
100
48 (AV)
G
p
η
D
(dB) (%)
(typ) (typ)
13.4
13.8
49
38.5
ACPR
400
(dBc)
(typ)
-
−61
[1]
ACPR
600
(dBc)
(typ)
-
−74
[2]
EVM
rms
(%)
(typ)
-
2.1
CW
GSM EDGE
[1]
[2]
ACPR
400
at 30 kHz resolution bandwidth.
ACPR
600
at 30 kHz resolution bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
s
Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an I
Dq
of 650 mA:
x
Load power = 48 W (AV)
x
Gain = 13.8 dB (typ)
x
Efficiency = 38.5 % (typ)
x
ACPR
400
=
−61
dBc (typ)
x
ACPR
600
=
−74
dBc (typ)
x
EVM
rms
= 2.1 % (typ)
s
Easy power control
s
Excellent ruggedness
s
High efficiency
s
Excellent thermal stability
s
Designed for broadband operation (1800 MHz to 2000 MHz)
Philips Semiconductors
BLF4G20-110B; BLF4G20S-110B
UHF power LDMOS transistor
s
Internally matched for ease of use
1.3 Applications
s
RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 1800 MHz to 2000 MHz frequency range.
2. Pinning information
Table 2:
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Symbol
BLF4G20-110B (SOT502A)
1
3
2
2
3
sym039
1
BLF4G20S-110B (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym039
[1]
Connected to flange
3. Ordering information
Table 3:
Ordering information
Package
Name
BLF4G20-110B
BLF4G20S-110B
-
-
Description
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
9397 750 14611
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 23 January 2006
2 of 14
Philips Semiconductors
BLF4G20-110B; BLF4G20S-110B
UHF power LDMOS transistor
4. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Min
-
−0.5
-
−65
-
Max
65
+15
12
+150
200
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5:
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from
junction to case
Conditions
T
case
= 80
°C
P
L
= 40 W
P
L
= 100 W
-
-
0.76
0.65
0.85
0.74
K/W
K/W
Min
Typ
Max
Unit
6. Characteristics
Table 6:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Conditions
Min
65
2.5
2.7
-
27
-
-
-
-
Typ
-
3.1
3.2
-
30
-
9.0
90
2.5
Max Unit
-
3.5
3.7
3
-
300
-
-
-
V
V
V
µA
A
nA
S
mΩ
pF
V
(BR)DSS
drain-source breakdown V
GS
= 0 V; I
D
= 0.9 mA
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold
voltage
gate-source quiescent
voltage
drain leakage current
drain cut-off current
gate leakage current
transfer conductance
drain-source on-state
resistance
feedback capacitance
V
DS
= 10 V; I
D
= 180 mA
V
DS
= 28 V; I
D
= 900 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 6 V; V
DS
= 10 V
V
GS
= 15 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10 A
V
GS
= V
GS(th)
+ 6 V; I
D
= 6 A
V
GS
= 0 V; V
DS
= 28 V; f = 1 MHz
9397 750 14611
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 23 January 2006
3 of 14
Philips Semiconductors
BLF4G20-110B; BLF4G20S-110B
UHF power LDMOS transistor
7. Application information
Table 7:
Application information
Mode of operation: Two-tone (200 kHz tone spacing); f = 1930 MHz and 1990 MHz.
V
DS
= 28 V; I
Dq
= 700 mA; T
case
= 25
°
C; unless otherwise specified; in a class-AB production test
circuit.
Symbol
G
p
IRL
η
D
IMD3
IMD5
IMD7
Parameter
power gain
input return loss
drain efficiency
third order intermodulation
distortion
fifth order intermodulation
distortion
Conditions
P
L(AV)
= 100 W
P
L(AV)
= 100 W
P
L(AV)
= 100 W
P
L(AV)
= 100 W
P
L(AV)
= 100 W
Min
12
-
36
-
-
-
Typ
13.5
−10
38.5
−29
−39.5
−53.5
Max
-
−6.5
-
−26
Unit
dB
dB
%
dBc
−36.5
dBc
−50.5
dBc
seventh order intermodulation P
L(AV)
= 100 W
distortion
7.1 Ruggedness in class-AB operation
The BLF4G20(S)-110B is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 650 mA; P
L
= 110 W (CW); f = 1990 MHz.
9397 750 14611
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 23 January 2006
4 of 14
Philips Semiconductors
BLF4G20-110B; BLF4G20S-110B
UHF power LDMOS transistor
15
G
p
(dB)
13
η
D
G
p
001aac387
60
η
D
(%)
40
15
G
p
(dB)
14
G
p
001aac388
50
η
D
(%)
40
13
η
D
30
12
11
20
11
20
10
9
0
40
80
120
P
L
(W)
0
160
10
0
20
40
60
0
80
100
P
L(AV)
(W)
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°C;
f = 1990 MHz
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°C;
f = 1990 MHz
Fig 1. One-tone CW power gain and drain efficiency
as functions of load power; typical values
Fig 2. Two-tone CW power gain and drain efficiency
as functions of average load power; typical
values
0
IMD3
(dBc)
001aac390
0
IMD
(dBc)
−20
001aac389
IMD3
-20
−40
IMD5
IMD7
-40
1
2
3
4
−60
-60
−80
0
20
40
60
80
100
P
L(AV)
(W)
-80
0
20
40
60
80
100
P
L(AV)
(W)
V
DS
= 28 V; I
Dq
= 650 mA; T
case
= 25
°C;
f = 1990 MHz
V
DS
= 28 V; T
case
= 25
°C;
f = 1990 MHz
(1) I
Dq
= 550 mA
(2) I
Dq
= 650 mA
(3) I
Dq
= 750 mA
(4) I
Dq
= 850 mA
Fig 3. Intermodulation distortion as a function of
average load power; typical values
Fig 4. Third order intermodulation distortion as a
function of average load power; typical values
9397 750 14611
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 23 January 2006
5 of 14
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