DISCRETE SEMICONDUCTORS
DATA SHEET
M3D252
BGD802
860 MHz, 18.5 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Oct 30
2002 Jan 23
NXP Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
FEATURES
•
Excellent linearity
•
Extremely low noise
•
Excellent return loss properties
•
Silicon nitride passivation
•
Rugged construction
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
CATV systems operating in the 40 to 860 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a supply voltage of 24 V (DC).
Side view
1
2
3
5
7
8
9
BGD802
PINNING - SOT115J
PIN
1
2, 3
5
7, 8
9
input
common
+V
B
common
output
DESCRIPTION
msa319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
power gain
total current consumption (DC)
PARAMETER
CONDITIONS
f = 50 MHz
f = 860 MHz
V
B
= 24 V
MIN.
18
18.5
−
−
410
MAX.
19
UNIT
dB
dB
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System
(IEC 60134).
SYMBOL
V
B
V
i
T
stg
T
mb
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
−
−
−40
−20
MIN.
MAX.
25
65
+100
+100
V
dBmV
°C
°C
UNIT
2002 Jan 23
2
NXP Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
CHARACTERISTICS
Table 1
Bandwidth 40 to 860 MHz; V
B
= 24 V; T
case
= 35
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 860 MHz
SL
FL
s
11
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
s
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
s
21
CTB
X
mod
CSO
d
2
V
o
NF
phase response
composite triple beat
cross modulation
f = 50 MHz
MIN.
18
18.5
0.2
−
20
18.5
17
15.5
14
20
18.5
17
15.5
14
−45
TYP.
18.5
19.5
1.1
±0.2
35
31
27
22
20
29.5
29
25.5
23
22
−
−66
−65
−67.5
−75
63.5
4.5
−
−
−
6.5
395
BGD802
SYMBOL
G
p
MAX.
19
−
2
±0.5
−
−
−
−
−
−
−
−
−
−
+45
−63
−62
−60
−69
−
5.5
6
7
7.5
9
410
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
mA
49 channels flat; V
o
= 47 dBmV;
−
measured at 859.25 MHz
49 channels flat; V
o
= 47 dBmV;
−
measured at 55.25 MHz
composite second order distortion 49 channels flat; V
o
= 47 dBmV;
−
measured at 860.5 MHz
second order distortion
output voltage
noise figure
note 1
d
im
=
−60
dB; note 2
f = 50 MHz
f = 550 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
−
61.5
−
−
−
−
−
−
I
tot
Notes
total current consumption (DC)
note 3
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 805.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 860.5 MHz.
2. Measured according to DIN45004B:
f
p
= 851.25 MHz; V
p
= V
o
;
f
q
= 858.25 MHz; V
q
= V
o
−6
dB;
f
r
= 860.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 849.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2002 Jan 23
3
NXP Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
Table 2
Bandwidth 40 to 860 MHz; V
B
= 24 V; T
case
= 30
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 860 MHz
SL
FL
s
11
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
s
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
s
21
CTB
phase response
composite triple beat
f = 50 MHz
129 channels flat;
V
o
= 44 dBmV;
measured at 859.25 MHz
129 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
MIN.
18
18.5
0.2
−
20
18.5
17
15.5
14
20
18.5
17
15.5
14
−45
−
TYP.
18.5
19.5
1.1
±0.2
35
31
27
22
20
29.5
29
25.5
23
22
−
−56.5
BGD802
SYMBOL
G
p
MAX.
19
−
2
±0.5
−
−
−
−
−
−
−
−
−
−
+45
−54
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
X
mod
cross modulation
−
−61
−59
dB
CSO
composite second order distortion 129 channels flat;
V
o
= 44 dBmV;
measured at 860.5 MHz
second order distortion
output voltage
noise figure
total current consumption (DC)
note 1
d
im
=
−60
dB; note 2
see Table 1
note 3
−
−64.5
−56
dB
d
2
V
o
NF
I
tot
Notes
−
61.5
−
−
−75
63
−
395
−69
−
−
410
dB
dBmV
dB
mA
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 805.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 860.5 MHz.
2. Measured according to DIN45004B:
f
p
= 851.25 MHz; V
p
= V
o
;
f
q
= 858.25 MHz; V
q
= V
o
−6
dB;
f
r
= 860.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 849.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2002 Jan 23
4
NXP Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler amplifier
Table 3
Bandwidth 40 to 750 MHz; V
B
= 24 V; T
case
= 30
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 750 MHz
SL
FL
s
11
f = 40 to 750 MHz
f = 40 to 750 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
s
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
s
21
CTB
phase response
composite triple beat
f = 50 MHz
110 channels flat;
V
o
= 44 dBmV;
measured at 745.25 MHz
110 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
MIN.
18
18.5
0.2
−
20
18.5
17
15.5
14
20
18.5
17
15.5
14
−45
−
TYP.
18.5
19.4
−
−
35
31
27
22
20
29.5
29
25.5
23
22
−
−60.5
BGD802
SYMBOL
G
p
MAX.
19
−
2
±0.5
−
−
−
−
−
−
−
−
−
−
+45
−58
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
X
mod
cross modulation
−
−62.5
−60
dB
CSO
composite second order distortion 110 channels flat;
V
o
= 44 dBmV;
measured at 746.5 MHz
second order distortion
output voltage
noise figure
total current consumption (DC)
note 1
d
im
=
−60
dB; note 2
see Table 1
note 3
−
−66
−60
dB
d
2
V
o
NF
I
tot
Notes
−
64
−
−
−
−
−
395
−72
−
−
410
dB
dBmV
dB
mA
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 691.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 746.5 MHz.
2. Measured according to DIN45004B:
f
p
= 740.25 MHz; V
p
= V
o
;
f
q
= 747.25 MHz; V
q
= V
o
−6
dB;
f
r
= 749.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 738.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2002 Jan 23
5
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