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BGD885,112

Description
IC AMP GAIN PWR 860MHZ SFM9
CategoryWireless rf/communication    Radio frequency and microwave   
File Size153KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BGD885,112 Overview

IC AMP GAIN PWR 860MHZ SFM9

BGD885,112 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSFM
package instructionSOT115D, 9 PIN
Contacts9
Manufacturer packaging codeSOT115D
Reach Compliance Codeunknown
Other featuresLOW NOISE, HIGH RELIABILITY
Characteristic impedance75 Ω
structureMODULE
Gain16.5 dB
Maximum operating frequency860 MHz
Minimum operating frequency40 MHz
Maximum operating temperature100 °C
Minimum operating temperature-20 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeSOT-115D
power supply24 V
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
Maximum slew rate450 mA
technologyHYBRID
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D248
BGD885
860 MHz, 17 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Oct 25
2001 Nov 02
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