BST72A,112 datasheet, PDF - EEWORLD Datasheet

BST72A,112: DescriptionMOSFET N-CH 100V 190MA SOT54; CategoryDiscrete semiconductor The transistor; File Size75KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BST72A,112 Overview

MOSFET N-CH 100V 190MA SOT54

Parameter Name	Attribute value
Brand Name	NXP Semiconductor
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Manufacturer packaging code	SOT54
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	0.19 A
Maximum drain current (ID)	0.19 A
Maximum drain-source on-resistance	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	10 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.83 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

DISCRETE SEMICONDUCTORS

DATA SHEET

BST72A

N-channel vertical D-MOS

transistor

Product speciﬁcation

File under Discrete Semiconductors, SC13b

April 1995

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