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BUK7514-55A,127

Description
MOSFET N-CH 55V 73A TO220AB
CategoryDiscrete semiconductor    The transistor   
File Size69KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK7514-55A,127 Overview

MOSFET N-CH 55V 73A TO220AB

BUK7514-55A,127 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-220
package instructionPLASTIC, SC-46, 3 PIN
Contacts3
Manufacturer packaging codeSOT78A
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresESD PROTECTION
Avalanche Energy Efficiency Rating (Eas)125 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)73 A
Maximum drain current (ID)73 A
Maximum drain-source on-resistance0.014 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)166 W
Maximum pulsed drain current (IDM)266 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope
available in TO220AB and SOT404 .
Using ’trench’ technology which
features
very
low
on-state
resistance. It is intended for use in
automotive and general purpose
switching applications.
BUK7514-55A
BUK7614-55A
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 10 V
MAX.
55
73
149
175
14
UNIT
V
A
W
˚C
mΩ
PINNING
TO220AB & SOT404
PIN
1
2
3
DESCRIPTION
gate
drain
2
PIN CONFIGURATION
mb
tab
SYMBOL
d
g
3
SOT404
1 2 3
source
1
tab/mb drain
TO220AB
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
73
52
266
166
175
UNIT
V
V
V
A
A
A
W
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient(TO220AB)
Thermal resistance junction to
ambient(SOT404)
CONDITIONS
-
in free air
Minimum footprint, FR4
board
TYP.
-
60
50
MAX.
0.9
-
-
UNIT
K/W
K/W
K/W
July 2000
1
Rev 1.000

BUK7514-55A,127 Related Products

BUK7514-55A,127 BUK7614-55A,118
Description MOSFET N-CH 55V 73A TO220AB MOSFET N-CH 55V 73A D2PAK
Brand Name NXP Semiconductor NXP Semiconductor
Is it Rohs certified? conform to conform to
Parts packaging code TO-220 D2PAK
Contacts 3 3
Manufacturer packaging code SOT78A SOT404
Reach Compliance Code unknown not_compliant
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 125 mJ 125 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V
Maximum drain current (Abs) (ID) 73 A 73 A
Maximum drain current (ID) 73 A 73 A
Maximum drain-source on-resistance 0.014 Ω 0.014 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSSO-G2
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 166 W 166 W
Maximum pulsed drain current (IDM) 266 A 266 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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