EEWORLDEEWORLDEEWORLD

Part Number

Search

BUK7614-55,118

Description
MOSFET N-CH 55V 68A D2PAK
CategoryDiscrete semiconductor    The transistor   
File Size69KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BUK7614-55,118 Overview

MOSFET N-CH 55V 68A D2PAK

BUK7614-55,118 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
Parts packaging codeD2PAK
Contacts3
Manufacturer packaging codeSOT404
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)200 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)68 A
Maximum drain-source on-resistance0.014 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)270 pF
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power consumption environment142 W
Maximum pulsed drain current (IDM)240 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)105 ns
Maximum opening time (tons)111 ns
Base Number Matches1
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’ technology the device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general
purpose
switching
applications.
BUK7614-55
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 10 V
MAX.
55
68
142
175
14
UNIT
V
A
W
˚C
mΩ
PINNING - SOT404
PIN
1
2
3
mb
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2
1
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
16
68
48
240
142
175
UNIT
V
V
V
A
A
A
W
˚C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
Minimum footprint, FR4
board
TYP.
-
50
MAX.
1.05
-
UNIT
K/W
K/W
April 1998
1
Rev 1.000
Homemade infrared radiation heater
The cold and foggy weather has caused a layer of ice to form on the infrared radiation cover. I racked my brains to solve this problem and made a heater myself, using the electric heating wire from th...
冰人 Industrial Control Electronics
Nomenclature of Chinese semiconductor discrete device models
[i=s]This post was last edited by jameswangsynnex on 2015-3-3 19:58[/i] Part 1: Use Arabic numerals to indicate the number of effective electrodes of the device. For example: 3AX81-81's 3Part 2 : Use ...
fighting Mobile and portable
Has anyone used the Zigbee of the STM32W series?
If you have used this chip, please share and discuss it....
yongheng5251 RF/Wirelessly
Design and implementation of mobile navigation and positioning system based on PDA.pdf
Design and implementation of mobile navigation and positioning system based on PDA.pdf...
yuandayuan6999 MCU
Ask about the concept of flash
Sorry for the newbie, I don't understand the basic concepts of flash, so I need your advice. 1) What is the relationship between sectors and blocks? The flash chip I use is am29lv160DB. According to t...
ywchen03 Embedded System
The amplifier is powered by a single +12V power supply, and other power supply voltages are converted automatically
How do you understand this sentence? Can VCA821 still be used?...
sunshine_chen Electronics Design Contest

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2034  1754  2391  1259  830  41  36  49  26  17 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号