Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
3.5
145
MAX.
1000
1000
450
5
10
32
1.5
-
160
UNIT
V
V
V
A
A
W
V
A
ns
T
hs
≤
25 ˚C
I
Csat
=2.5A,I
B1
=0.5A,I
B2
=0.8A
PINNING - SOT186A
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
V
CBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1000
450
1000
5
10
2
4
32
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
September 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
h
FEsat
PARAMETER
Collector cut-off current
1
CONDITIONS
MIN.
-
-
-
450
-
-
10
14
10
8
TYP.
-
-
-
-
0.25
-
22
25
13.5
10
MAX.
1.0
2.0
10
-
1.5
1.3
35
35
17
12
UNIT
mA
mA
mA
V
V
V
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
Emitter cut-off current
V
EB
= 9 V; I
C
= 0 A
Collector-emitter sustaining voltage I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
Collector-emitter saturation voltages I
C
= 3.0 A; I
B
= 0.6 A
Base-emitter saturation voltage
I
C
= 2.5 A; I
B
= 0.33 A
DC current gain
I
C
= 5 mA; V
CE
= 5 V
I
C
= 500 mA; V
CE
= 5 V
I
C
= 2.5 A; V
CE
= 5 V
I
C
= 3.5 A; V
CE
= 5 V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
t
s
t
f
Turn-off storage time
Turn-off fall time
CONDITIONS
I
Csat
= 2.5 A; I
B1
= -I
B2
= 0.5 A;
R
L
= 75 ohms; V
BB2
= 4 V;
TYP.
MAX.
UNIT
µs
µs
µs
µs
ns
µs
ns
0.5
3.3
0.33
0.7
4
0.45
I
Csat
= 2.5 A; I
B1
= 0.5 A; L
B
= 1
µH;
-V
BB
= 5 V
I
Csat
= 2.5 A; I
B1
= 0.5 A; L
B
= 1
µH;
-V
BB
= 5 V; T
j
= 100 ˚C
1.4
145
1.6
160
1.7
160
1.9
200
1
Measured with half sine-wave voltage (curve tracer).
September 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
+ 50v
100-200R
IC
90 %
ICsat
90 %
10 %
Horizontal
Oscilloscope
Vertical
300R
30-60 Hz
6V
1R
IB
ts
ton
toff
IB1
10 %
tr
30ns
-IB2
tf
Fig.1. Test circuit for V
CEOsust
.
Fig.4. Switching times waveforms with resistive load.
IC / mA
VCC
250
200
LC
IB1
100
LB
T.U.T.
-VBB
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.5. Test circuit inductive load.
V
CC
= 300 V; -V
BE
= 5 V; L
C
= 200 uH; L
B
= 1 uH
VCC
ICsat
90 %
IC
RL
VIM
0
tp
IB
RB
T.U.T.
ts
toff
IB1
tf
10 %
t
T
-IB2
t
Fig.3. Test circuit resistive load. V
IM
= -6 to +8 V
V
CC
= 250 V; t
p
= 20
µ
s;
δ
= t
p
/ T = 0.01.
R
B
and R
L
calculated from I
Con
and I
Bon
requirements.
Fig.6. Switching times waveforms with inductive load.
September 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
ICon
90 %
IC
2.0
VCEsat/V
1.6
IC=1A
1.2
2A
3A
4A
10 %
ts
toff
IB
IBon
t
-IBoff
0.0
0.01
0.10
IB/A
1.00
10.00
tf
t
0.8
0.4
Fig.7. Switching times waveforms with inductive load.
Fig.10. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IB); T
j
=25˚C.
120
110
100
90
80
70
60
50
40
30
20
10
0
%
Normalised Derating
with heatsink compound
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VBEsat/V
P tot
0
20
40
60
80
Ths / C
100
120
140
0.1
1.0
IC/A
10.0
Fig.8. Normalised power dissipation.
PD% = 100
⋅
PD/PD
25˚C
= f (T
hs
)
h
FE
100
5V
Fig.11. Base-Emitter saturation voltage.
Solid lines = typ values, V
BEsat
= f(IC); at IC/IB =4.
VCEsat/V
0.5
0.4
10
0.3
0.2
Tj = 25 C
1V
0.1
1
0.01
0.0
0.1
IC / A
1
10
0
1
IC/A
10
Fig.9. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
Fig.12. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IC); at IC/IB =4.
September 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
10
Zth / (K/W)
BU1706AX
VCC
0.5
1
0.2
0.1
0.05
0.02
P
D
0.01
D=0
0.001
T
10u 100u 1m 10m 100m
t/s
1
t
tp
t
p
LC
0.1
D=
T
IBon
VCL
LB
T.U.T.
-VBB
100
1u
10
Fig.13. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.15. Test circuit RBSOA. V
cl
≤
1000V; V
cc
= 150V;
V
BB
= -5V; L
B
= 1
µ
H; L
c
= 200
µ
H
IC/V
11
10
9
8
7
6
5
4
3
2
1
0
0
200
400
600
800
1,000
1,200
VCE CLAMP/V
Fig.14. Reverse bias safe operating area. T
j
≤
T
j max
September 1998
5
Rev 1.000
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