PMEM4030NS
NPN transistor/Schottky rectifier module
Rev. 02 — 8 July 2005
Product data sheet
1. Product profile
1.1 General description
Combination of a NPN transistor with low V
CEsat
and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1
(SO8/MS-012) small plastic package. PNP complement: PMEM4030PS.
1.2 Features
s
s
s
s
s
s
1 W total power dissipation
High current capability up to 2 A
Reduces Printed-Circuit Board (PCB) area required
Reduces pick and place costs
Small plastic Surface Mounted Device (SMD) package
Transistor
x
Low collector-emitter saturation voltage
s
Diode
x
High-speed switching
x
Low forward voltage
x
Guard ring protected
1.3 Applications
s
DC-to-DC converters
s
Inductive load drivers
s
General-purpose load drivers
1.4 Quick reference data
Table 1:
Symbol
V
CEO
I
C
V
R
I
F
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
reverse voltage
forward current
Conditions
open base
continuous
Min
-
-
-
-
Typ
-
-
-
-
Max
50
2
40
1
Unit
V
A
V
A
NPN transistor
Schottky barrier rectifier
Philips Semiconductors
PMEM4030NS
NPN transistor/Schottky rectifier module
2. Pinning information
Table 2:
Pin
1
2
3
4
5
6
7
8
Pinning
Description
base
emitter
not connected
anode
cathode
cathode
collector
collector
006aaa405
Simplified outline
8
5
Symbol
1
4
3. Ordering information
Table 3:
Ordering information
Package
Name
PMEM4030NS
SO8
Description
plastic small outline package; 8 leads; body width
3.9 mm
Version
SOT96-1
Type number
4. Marking
Table 4:
Marking codes
Marking code
P4030NS
Type number
PMEM4030NS
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
2 of 14
Philips Semiconductors
PMEM4030NS
NPN transistor/Schottky rectifier module
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CRM
I
CM
I
B
P
tot
T
j
T
amb
V
R
I
F
I
FRM
I
FSM
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
repetitive peak collector
current
peak collector current
base current (DC)
total power dissipation
junction temperature
ambient temperature
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
non-repetitive peak reverse
current
junction temperature
ambient temperature
storage temperature
t
p
≤
1 ms;
δ ≤
0.25
t = 8.3
µs;
half
sine wave; JEDEC
method
t
p
≤
100
µs
continuous
T
amb
≤
25
°C
[1]
[2]
Conditions
open emitter
open base
open collector
continuous
t
p
≤
100 ms;
δ ≤
0.25
Min
-
-
-
-
-
-
-
-
-
-
−65
-
-
-
-
Max
50
50
5
2
3
5
0.5
550
1
150
+150
40
1
3.5
10
Unit
V
V
V
A
A
A
A
mW
W
°C
°C
V
A
A
A
NPN transistor
Schottky barrier rectifier
I
RSM
T
j
T
amb
T
stg
[1]
[2]
-
-
−65
−65
0.5
125
+125
+150
A
°C
°C
°C
Combined device
Device mounted on an FR4 PCB, single-sided copper, tin-plated, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
3 of 14
Philips Semiconductors
PMEM4030NS
NPN transistor/Schottky rectifier module
6. Thermal characteristics
Table 6:
R
th(j-a)
Thermal characteristics
Conditions
in free air
[1]
[2]
Symbol Parameter
thermal resistance from
junction to ambient
Min
-
-
Typ
-
-
Max
225
125
Unit
K/W
K/W
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
1
0
006aaa243
10
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint.
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
4 of 14
Philips Semiconductors
PMEM4030NS
NPN transistor/Schottky rectifier module
7. Characteristics
Table 7:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
= 50 V; I
E
= 0 A
V
CB
= 50 V; I
E
= 0 A;
T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 2 V; I
C
= 100 mA
V
CE
= 2 V; I
C
= 500 mA
V
CE
= 2 V; I
C
= 1 A
V
CE
= 2 V; I
C
= 2 A
V
CE
= 2 V; I
C
= 3 A
V
CEsat
collector-emitter
saturation voltage
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 50 mA
I
C
= 2 A; I
B
= 100 mA
I
C
= 2 A; I
B
= 200 mA
I
C
= 3 A; I
B
= 300 mA
R
CEsat
V
BEsat
V
BEon
f
T
C
c
collector-emitter
saturation resistance
I
C
= 2 A; I
B
= 200 mA
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
200
200
200
130
80
-
-
-
-
-
-
-
-
1.1
100
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
100
-
-
-
-
-
Max
100
50
100
-
-
450
-
-
80
160
280
260
370
130
1.1
1.2
-
-
25
Unit
nA
µA
nA
NPN transistor
I
EBO
h
FE
mV
mV
mV
mV
mV
mΩ
V
V
V
MHz
pF
base-emitter saturation I
C
= 2 A; I
B
= 100 mA
voltage
I
C
= 3 A; I
B
= 300 mA
base-emitter turn-on
voltage
transition frequency
collector capacitance
V
CE
= 2 V; I
C
= 1 A
V
CE
= 5 V; I
C
= 100 mA;
f = 100 MHz
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
I
F
= 100 mA
I
F
= 1 A
V
R
= 10 V
V
R
= 40 V
V
R
= 4 V; f = 1 MHz;
[1]
[1]
[1]
Schottky barrier rectifier
V
F
I
R
C
d
[1]
forward voltage
reverse current
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
[1]
[1]
[1]
[1]
-
-
-
-
-
280
460
15
60
65
330
500
40
300
80
mV
mV
µA
µA
pF
PMEM4030NS_2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 8 July 2005
5 of 14
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