DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D259
BLS3135-50
Microwave power transistor
Product specification
Supersedes data of 1999 Aug 16
2003 Apr 15
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES
•
Suitable for short and medium pulse applications
•
Internal input and output matching networks for an easy
circuit design
•
Emitter ballasting resistors improve ruggedness
•
Gold metallization ensures excellent reliability
•
Interdigitated emitter-base structure provides high
emitter efficiency
•
Multicell geometry improves power sharing and reduces
thermal resistance.
handbook, halfpage
BLS3135-50
PINNING - SOT422A
PIN
1
2
3
collector
emitter
base; connected to flange
DESCRIPTION
1
APPLICATIONS
•
Common base class-C pulsed power amplifiers for radar
applications in the 3.1 to 3.5 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common base class-C test circuit.
MODE OF OPERATION
Pulsed, class-C
f
(GHz)
3.1 to 3.5
V
CB
(V)
40
P
L
(W)
50
G
p
(dB)
typ. 8
η
C
(%)
typ. 40
3
2
3
MBK051
Fig.1 Simplified outline.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2003 Apr 15
2
Philips Semiconductors
Product specification
Microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CES
V
EBO
I
CM
P
tot
T
stg
T
j
T
sld
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
operating junction temperature
soldering temperature
up to 0.2 mm from ceramic cap;
t
≤
10 s
R
BE
= 0
open collector
t
p
≤
100
µs; δ ≤
10%
t
p
= 100
µs; δ
= 10%; T
mb
= 25
°C
CONDITIONS
open emitter
−
−
−
−
−
−65
−
−
BLS3135-50
MIN.
MAX.
75
75
2
6
80
+200
200
235
UNIT
V
V
V
A
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
Z
th j-h
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions. Measured with IR-scan with 20
µm
spot size at hotspot.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CES
I
CBO
I
CES
I
EBO
h
FE
PARAMETER
collector-base breakdown voltage
collector leakage current
collector leakage current
emitter leakage current
DC current gain
CONDITIONS
I
C
= 15 mA; open emitter
V
CB
= 40 V; I
E
= 0
V
CE
= 40 V; V
BE
= 0
V
EB
= 1.5 V; I
C
= 0
V
CB
= 5 V; I
C
= 1.5 A
MIN.
75
75
−
−
−
40
MAX.
−
−
1.5
3
0.3
−
UNIT
V
V
mA
mA
mA
PARAMETER
thermal impedance from junction to heatsink
CONDITIONS
t
p
= 100
µs; δ
= 10%; note 1
t
p
= 300
µs; δ
= 10%; note 1
VALUE
0.71
0.99
UNIT
K/W
K/W
collector-emitter breakdown voltage I
C
= 15 mA; V
BE
= 0
APPLICATION INFORMATION
RF performance at T
h
= 25
°C
in a common-base test circuit.
MODE OF OPERATION
Class-C; t
p
= 100
µs; δ
= 10%
f
(GHz)
3.1 to 3.5
V
CE
(V)
40
P
L
(W)
≥50
typ. 55
G
p
(dB)
≥7
typ. 8
η
C
(%)
≥35
typ. 40
2003 Apr 15
3
Philips Semiconductors
Product specification
Microwave power transistor
Typical impedance
FREQUENCY
(GHZ)
3.1
3.2
3.3
3.4
3.5
Z
S
(Ω)
23.5
−
j 5.6
23.6
−
j 4.3
23.8
−
j 2.9
24.3
−
j 1.6
24.9
−
j 0.3
BLS3135-50
Z
L
(Ω)
7.8
−
j 3.7
7.3
−
j 4.1
6.6
−
j 4.3
5.8
−
j 4.2
5.1
−
j 4.1
2003 Apr 15
4
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
handbook, halfpage
80
MCD758
PL
(W)
60
(2)
(1)
(3)
10
handbook, halfpage
Gp
(dB)
8
MCD759
(2)
(1)
(3)
6
40
4
2
20
0
(3)
0
0
2
4
6
8
10
PD (W)
−2
0
20
40
60
PL (W)
80
V
CB
= 40 V; class-C; t
p
= 100
µs; δ
= 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
V
CB
= 40 V; class-C; P
L
= 50 W; t
p
= 100
µs; δ
= 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
Fig.2
load power as a function of drive
power; typical values.
Fig.3
Power gain as a function of load
power; typical values.
handbook, halfpage
50
η
C
MCD760
handbook, halfpage
10
Gp
MCD761
(%)
40
(2)
(1)
(3)
(dB)
8
Gp
Return
Losses
20
Return
Losses
(dB)
16
30
6
12
20
4
8
10
2
4
0
0
20
40
60
PL (W)
80
0
3.0
0
3.1
3.2
3.3
3.4
3.5
f (GHz)
V
CB
= 40 V; class-C; t
p
= 100
µs; δ
= 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
V
CB
= 40 V; class-C; P
L
= 50 W; t
p
= 100
µs; δ
= 10%.
Fig.4
Collector efficiency as a function of load
power; typical values.
Fig.5
Power gain and input return losses as
functions of frequency; typical values.
2003 Apr 15
5
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