Freescale Semiconductor
Technical Data
Document Number: MHW9276N
Rev. 4, 5/2006
Gallium Arsenide
CATV Amplifier Module
Features
•
79 - , 112 - and 132 - Channel Loading
•
Excellent Distortion Performance
•
Integrated ESD Protection Diodes
•
GaAs FET Transistor Technology
•
Unconditionally Stable Under All Load Conditions
Applications
•
CATV Systems Operating in the 40 to 870 MHz Frequency Range
•
Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
•
Driver Amplifier in Linear General Purpose Applications
Description
•
24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Amplifier Module
•
Replaced MHW9276. There are no form, fit or function changes with this
part replacement.
•
RoHS Compliant
MHW9276N
870 MHz
27.9 dB GAIN
132 - CHANNEL
GaAs CATV AMPLIFIER MODULE
ARCHIVE INFORMATION
CASE 1302 - 01, STYLE 1
Table 1. Maximum Ratings
Rating
RF Voltage Input (Single Tone)
DC Supply Voltage
Operating Case Temperature Range
Storage Temperature Range
Symbol
V
in
V
CC
T
C
T
stg
Value
+65
+26
- 20 to +100
- 40 to +100
Unit
dBmV
Vdc
°C
°C
Table 2. ESD Maximum Ratings
Rating
Surge Voltage per IEC 1000 - 4 - 5
Human Body Model per Mil. Std. 1686
Input Value
200
2
Output Value
200
2
Unit
V
kV
Table 3. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +30°C, 75
Ω
system unless otherwise noted)
Characteristic
Frequency Range
Power Gain
Slope
Gain Flatness (40 - 870 MHz, Peak - to - Valley)
870 MHz
40 - 870 MHz
Symbol
BW
G
p
S
G
F
Min
40
27
0.4
—
Typ
—
27.9
0.95
—
Max
870
28.5
1.4
0.8
Unit
MHz
dB
dB
dB
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MHW9276N
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +30°C, 75
Ω
system unless otherwise noted)
(continued)
Characteristic
Input Return Loss (Z
o
= 75 Ohms)
40 - 200 MHz
201 - 600 MHz
601 - 870 MHz
ORL
40 - 200 MHz
201 - 600 MHz
601 - 870 MHz
20
18
18
—
—
—
—
Symbol
IRL
20
19
18
—
—
—
—
Min
Typ
Max
Unit
dB
Output Return Loss (Z
o
= 75 Ohms)
dB
Composite Second Order
(V
out
= +44 dBmV/ch., Worst Case)
(V
out
= +44 dBmV/ch., Worst Case)
(V
out
= +44 dBmV/ch., Worst Case)
dBc
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
50 MHz
550 MHz
750 MHz
870 MHz
CSO
79
CSO
112
CSO
132
XMD
79
XMD
112
XMD
132
CTB
79
CTB
112
CTB
132
NF
—
—
—
—
—
—
—
—
—
—
—
—
—
235
- 70
- 66
- 66
- 60
- 60
- 60
- 71
- 68
- 66
5.0
5.0
5.0
5.0
250
- 64
- 62
- 60
dBc
- 53
- 53
- 53
dBc
- 65
- 61
- 60
5.5
—
—
6.5
265
dB
ARCHIVE INFORMATION
Cross Modulation Distortion @ Ch 2
(V
out
= +44 dBmV/ch., FM = 55.25 MHz)
(V
out
= +44 dBmV/ch., FM = 55.25 MHz)
(V
out
= +44 dBmV/ch., FM = 55.25 MHz)
Composite Triple Beat
(V
out
= +44 dBmV/ch., Worst Case)
(V
out
= +44 dBmV/ch., Worst Case)
(V
out
= +44 dBmV/ch., Worst Case)
Noise Figure
DC Current (V
DC
= 24 V, T
C
= 45°C)
I
DC
mA
MHW9276N
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
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MHW9276N
Document Number: MHW9276N
4
Rev. 4, 5/2006
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
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