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MRF5P21240HR5

Description
FET RF 65V 2.17GHZ NI-1230
Categorysemiconductor    Discrete semiconductor   
File Size819KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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MRF5P21240HR5 Overview

FET RF 65V 2.17GHZ NI-1230

MRF5P21240HR5 Parametric

Parameter NameAttribute value
Transistor typeLDMOS
frequency2.11GHz ~ 2.17GHz
Gain13dB
Voltage - Test28V
Rated current-
Noise Figure-
Current - Test2.2A
Power - output52W
Voltage - Rated65V
Package/casingNI-1230
Supplier device packagingNI-1230
Freescale Semiconductor
Technical Data
Document Number: MRF5P21240HR6
Rev. 2, 10/2008
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
Typical 2--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
2200 mA, P
out
= 52 Watts Avg., f = 2157.5 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13 dB
Drain Efficiency — 24%
IM3 @ 10 MHz Offset — --36 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --39 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40
μ
Nominal.
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF5P21240HR6
2110-
-2170 MHz, 52 W AVG., 28 V
2 x W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFET
ARCHIVE INFORMATION
CASE 375D-
-05, STYLE 1
NI-
-1230
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
CW
Value
--0.5, +65
--0.5, +15
603
3.4
-- 65 to +150
150
200
200
1.18
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 82°C, 180 W CW
Case Temperature 77°C, 52 W CW
Symbol
R
θJC
Value
(1,2)
0.29
0.32
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF5P21240HR6
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION

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