Freescale Semiconductor
Technical Data
Document Number: MRF6S21100N
Rev. 3, 12/2008
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio, WLL and
TD--SCDMA applications.
•
Typical 2--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1050 mA,
P
out
= 23 Watts Avg., f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Bandwidth
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
225°C Capable Plastic Package
•
N Suffix Indicates Lead--Free Terminations. RoHS Compliant.
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6S21100NR1
MRF6S21100NBR1
2110-
-2170 MHz, 23 W AVG., 28 V
2 x W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 1486-
-03, STYLE 1
TO-
-270 WB-
-4
PLASTIC
MRF6S21100NR1
CASE 1484-
-04, STYLE 1
TO-
-272 WB-
-4
PLASTIC
MRF6S21100NBR1
Table 1. Maximum Ratings
Rating
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 73°C, 23 W CW
Symbol
R
θJC
Value
(2,3)
0.57
0.66
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2005--2008. All rights reserved.
MRF6S21100NR1 MRF6S21100NBR1
1
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
RF Power Field Effect Transistors
LIFETIME BUY
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
LIFETIME BUY
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 330
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1050 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 1050 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.3 Adc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1
—
2.2
—
2
2.8
3.1
0.24
3
—
4.4
—
Vdc
Vdc
Vdc
Vdc
Dynamic Characteristics
(2)
C
rss
—
1.5
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1050 mA, P
out
= 23 W Avg., f1 = 2112.5 MHz, f2 =
2157.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
η
D
IM3
ACPR
IRL
13
24
--47
--50
—
14.5
25.5
--37
--40
--12
16
36
--35
--38
--10
dB
%
dBc
dBc
dB
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. V
GG
= 11/10 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part is internally matched both on input and output.
MRF6S21100NR1 MRF6S21100NBR1
2
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
V
BIAS
+
R1
C1
R2
C2
B1
C3
C4
Z12
C5
C6
V
SUPPLY
Z5
RF
INPUT
Z6
Z1
C7
Z2
Z3
Z4
DUT
Z11
Z7
Z8
Z9
C9
Z10
RF
OUTPUT
C8
V
SUPPLY
C10
C11
C12
LIFETIME BUY
Z1, Z10
Z2
Z3
Z4
Z5
Z6
0.743″ x 0.084″ Microstrip
0.893″ x 0.084″ Microstrip
0.175″ x 0.084″ Microstrip
0.420″ x 0.800″ Microstrip
1.231″ x 0.040″ Microstrip
0.100″ x 0.880″ Microstrip
Z7
Z8
Z9
Z11, Z12
PCB
0.259″ x 0.880″ Microstrip
0.215″ x 0.230″ Microstrip
0.787″ x 0.084″ Microstrip
1.171″ x 0.120″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″,
ε
r
= 2.5
Figure 1. MRF6S21100NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values
Part
Ferrite Bead
10
μF,
35 V Tantalum Capacitor
0.01
μF
Chip Capacitor
5.1 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
10 pF Chip Capacitor
1.1 pF Chip Capacitor
5.1 pF Chip Capacitor (MRF6S21100NR1)
8.2 pF Chip Capacitor (MRF6S21100NBR1)
1 kΩ, 1/4 W Chip Resistor
10 kΩ, 1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Description
Part Number
25008051107Y0
T491D106K035AT
C1825C103J1GAC
ATC100B5R1BT500XT
GRM55DR61H106KA88L
ATC100B100BT500XT
ATC100B1R1BT500XT
ATC100B5R1BT500XT
ATC100B8R2BT500XT
CRCW12061001FKEA
CRCW12061002FKEA
CRCW120610R0FKEA
Manufacturer
Fair--Rite
Kemet
Kemet
ATC
Murata
ATC
ATC
ATC
ATC
Vishay
Vishay
Vishay
B1
C1
C2
C3, C4, C10
C5, C6, C11, C12
C7
C8
C9
R1
R2
R3
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
3
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
R3
B1 R3
R1
R2
C1
C3
C2
C5
C6
C7
C8
C9
LIFETIME BUY
MRF6S21100N/NB, Rev. 3
C10
C11 C12
Figure 2. MRF6S21100NR1(NBR1) Test Circuit Component Layout
MRF6S21100NR1 MRF6S21100NBR1
4
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
C4
CUT OUT AREA
TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 22.5 W (Avg.), I
DQ
= 1050 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
14.6
G
ps
, POWER GAIN (dB)
14.4
14.2
14
13.8
13.6
13.4
13.2
η
D
26
25
24
G
ps
IM3
ACPR
IRL
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
IM3 (dBc), ACPR (dBc)
--31
--34
--37
--40
--43
--46
2220 2240
--9
--10
--11
--12
--13
--14
13
2060 2080
LIFETIME BUY
Figure 3. 2-
-Carrier W-
-CDMA Broadband Performance @ P
out
= 22.5 Watts Avg.
14
13.8
G
ps
, POWER GAIN (dB)
13.6
13.4
13.2
13
12.8
12.6
12.4
η
D
37
36
35
V
DD
= 28 Vdc, P
out
= 45 W (Avg.), I
DQ
= 1050 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IM3
IM3 (dBc), ACPR (dBc)
--24
--26
--28
--30
--32
--9
--10
--11
--12
--13
--14
ACPR
IRL
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
12.2
2060 2080
--34
2220 2240
Figure 4. 2-
-Carrier W-
-CDMA Broadband Performance @ P
out
= 45 Watts Avg.
16
15
--10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
I
DQ
= 1575 mA
1312 mA
1050 mA
787 mA
G
ps
, POWER GAIN (dB)
--20
--30
14
13
12
11
10
IRL, INPUT RETURN LOSS (dB)
G
ps
34
η
D
, DRAIN
EFFICIENCY (%)
14.2
38
1575 mA
I
DQ
= 525 mA
--40
1312 mA
--50
787 mA
--60
0.1
1
10
100
300
P
out
, OUTPUT POWER (WATTS) PEP
1050 mA
525 mA
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
0.1
1
10
100
300
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-
-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
5
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
14.8
27
η
D
, DRAIN
EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
15
28
京公网安备 11010802033920号
EEWORLD
