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MW5IC2030MBR5

Description
IC PWR AMP RF 26V 30W TO-272-16
CategoryTopical application    Wireless rf/communication   
File Size533KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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MW5IC2030MBR5 Overview

IC PWR AMP RF 26V 30W TO-272-16

MW5IC2030MBR5 Parametric

Parameter NameAttribute value
frequency1.93GHz ~ 1.99GHz
P1dB-
Gain23dB
Noise Figure-
RF typeCell phone, CDMA, EDGE, GSM, TDMA, W-CDMA
Voltage - Power26V
Current - Power160mA
Test frequency-
Package/casingTO-272-16 variant, flat leads
Supplier device packagingTO-272 WB-16
Document Number: MW5IC2030M
Freescale Semiconductor
Technical Data
Replaced by MW5IC2030NBR1(GNBR1). There are no form, fit or function changes with this
Rev. 6, 1/2006
RF LDMOS Wideband Integrated
Power Amplifiers
part replacement. N suffix added to part number to indicate transition to lead - free terminations.
The MW5IC2030 wideband integrated circuit is designed with on - chip
matching that makes it usable from 1930 to 1990 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
Typical CDMA Performance: V
DD
= 27 Volts, I
DQ1
= 160 mA,
I
DQ2
= 230 mA, P
out
= 5 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — - 49 dBc in 30 kHz Channel Bandwidth
Driver Application
Typical CDMA Performance: V
DD
= 27 Volts, I
DQ1
= 220 mA, I
DQ2
=
240 mA, P
out
= 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 24 dB
ACPR @ 885 kHz Offset — - 63 dBc in 30 kHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 27 Vdc, 1990 MHz, 30 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 0 to 43 dBm CW
P
out
.
On - Chip Matching (50 Ohm Input, >4 Ohm Output)
Integrated Temperature Compensation Capability with Enable/Disable
Function
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
Integrated ESD Protection
200°C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW5IC2030MBR1
MW5IC2030GMBR1
1930 - 1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W - CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
ARCHIVE INFORMATION
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW5IC2030MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW5IC2030GMBR1
V
DS1
V
RD2
V
RG2
RF
in
V
RD1
V
DS2
/RF
out
GND
V
DS1
V
RD2
V
RG2
GND
RF
in
V
RD1
V
RG1
/V
GS1
V
GS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
V
DS2/
RF
out
13
12
NC
GND
V
RG1
/V
GS1
V
GS2
Quiescent Current
Temperature Compensation
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW5IC2030MBR1 MW5IC2030GMBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION

MW5IC2030MBR5 Related Products

MW5IC2030MBR5 MW5IC2030GMBR1 MW5IC2030GMBR5 MW5IC2030MBR1
Description IC PWR AMP RF 26V 30W TO-272-16 IC PWR AMP RF 26V 30W TO272-16GW IC PWR AMP RF 26V 30W TO272-16GW IC PWR AMP RF 26V 30W TO-272-16
Gain 23dB 21.5 dB 23dB 21.5 dB
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