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MWIC930R5

Description
MOSFET RF N-CH 28V 30W TO-272-16
CategoryTopical application    Wireless rf/communication   
File Size673KB,20 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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MWIC930R5 Overview

MOSFET RF N-CH 28V 30W TO-272-16

MWIC930R5 Parametric

Parameter NameAttribute value
frequency900MHz
P1dB-
Gain30dB
Noise Figure-
RF typeCell phone, GSM, EDGE, N-CDMA
Voltage - Power26V
Current - Power90mA
Test frequency-
Package/casingTO-272-16 variant, flat leads
Supplier device packagingTO-272 WB-16
Document Number: MWIC930
Freescale Semiconductor
Rev. 5, 5/2006
Technical Data
Replaced by MWIC930NR1(GNR1). There are no form, fit or function changes with this part
RF LDMOS Wideband Integrated
Power Amplifiers
replacement. N suffix added to part number to indicate transition to lead - free terminations.
The MWIC930 wideband integrated circuit is designed for CDMA and
GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage (26 to
28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband On - Chip integral matching circuitry makes it usable from 790 to
1000 MHz. The linearity performances cover all modulations for cellular
applications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA.
Final Application
Typical Performance @ P1dB: V
DD
= 26 Volts, I
DQ1
= 90 mA, I
DQ2
=
240 mA, P
out
= 30 Watts P1dB, Full Frequency Band (921 - 960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 45%
Driver Application
Typical Single - Carrier N - CDMA Performance: V
DD
= 27 Volts, I
DQ1
=
90 mA, I
DQ2
= 240 mA, P
out
= 5 Watts Avg., Full Frequency Band
(865 - 894 MHz), IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 31 dB
Power Added Efficiency — 21%
ACPR @ 750 kHz Offset — - 52 dBc in 30 kHz Bandwidth
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output
Power
Characterized with Series Equivalent Large - Signal Impedance Parameters
On - Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
Integrated ESD Protection
200°C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MWIC930R1
MWIC930GR1
746 - 960 MHz, 30 W, 26 - 28 V
SINGLE N - CDMA, GSM/GSM EDGE
RF LDMOS WIDEBAND INTEGRATED
POWER AMPLIFIERS
ARCHIVE INFORMATION
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MWIC930R1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MWIC930GR1
V
RD2
V
RG2
V
DS1
RF
in
V
RD1
V
RG1
V
GS1
V
GS2
V
DS2
/RF
out
GND
V
RD2
V
RG2
V
DS1
V
RD1
RF
in
V
RG1
V
GS1
V
GS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out/
V
DS2
13
12
NC
GND
Quiescent Current
Temperature Compensation
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987/D,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MWIC930R1 MWIC930GR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION

MWIC930R5 Related Products

MWIC930R5 MWIC930GNR1 MWIC930NR1 MWIC930GR1 MWIC930R1
Description MOSFET RF N-CH 28V 30W TO-272-16 RF Amplifier 30W 900MHZ TO272WBGN RF Amplifier 30W 900MHZ TO272WBN IC PWR AMP RF 30W TO272-16GW MOSFET RF N-CH 28V 30W TO-272-16
Gain 30dB 28 dB 28 dB 28 dB 28 dB
Is it Rohs certified? - conform to conform to incompatible incompatible
Maker - NXP NXP NXP NXP
package instruction - FLNG,.8\'\'H SPACE FLNG,.8\'\'H SPACE FLNG,.8\'\'H SPACE FLNG,.8\'\'H SPACE
Reach Compliance Code - not_compliant not_compliant not_compliant not_compliant
ECCN code - 5A991.G 5A991.G 5A991 5A991
Characteristic impedance - 50 Ω 50 Ω 50 Ω 50 Ω
structure - COMPONENT COMPONENT COMPONENT COMPONENT
JESD-609 code - e3 e3 e0 e0
Number of functions - 1 1 1 1
Maximum operating frequency - 960 MHz 960 MHz 960 MHz 960 MHz
Minimum operating frequency - 746 MHz 746 MHz 746 MHz 746 MHz
Maximum operating temperature - 115 °C 115 °C 115 °C 115 °C
Minimum operating temperature - -30 °C -30 °C -30 °C -30 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Encapsulate equivalent code - FLNG,.8\'\'H SPACE FLNG,.8\'\'H SPACE FLNG,.8\'\'H SPACE FLNG,.8\'\'H SPACE
power supply - 27 V 27 V 27 V 27 V
RF/Microwave Device Types - WIDE BAND HIGH POWER WIDE BAND HIGH POWER WIDE BAND HIGH POWER WIDE BAND HIGH POWER
technology - MOS MOS MOS MOS
Terminal surface - Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum voltage standing wave ratio - 5 5 5 5
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