Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D114
1PS226
High-speed double diode
Product data sheet
Supersedes data of April 1996
1996 Sep 03
NXP Semiconductors
Product data sheet
High-speed double diode
FEATURES
•
Small plastic SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage:
max. 80 V
•
Repetitive peak reverse voltage:
max. 85 V
•
Repetitive peak forward current:
max. 500 mA.
2
1
1PS226
PINNING
PIN
1
2
3
DESCRIPTION
anode
cathode
common connection
DESCRIPTION
The 1PS226 consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the small plastic SMD SC59
package.
APPLICATIONS
•
High-speed switching in e.g.
surface mounted circuits.
3
Top view
Marking code:
C3T.
MAM083
2
1
3
Fig.1 Simplified outline (SC59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
RRM
V
R
I
F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge
t = 1
μs
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−65
−
4
0.5
250
+150
150
A
A
mW
°C
°C
−
−
−
−
−
85
80
215
125
500
V
V
mA
mA
mA
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1996 Sep 03
2
NXP Semiconductors
Product data sheet
High-speed double diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
R
reverse current
see Fig.4
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 80 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.5
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured
at I
R
= 1 mA; see Fig.6
when switched from I
F
= 10 mA;
t
r
= 20 ns; see Fig.7
−
−
−
−
−
−
30
610
740
−
−
−
−
PARAMETER
CONDITIONS
TYP.
1PS226
MAX.
UNIT
mV
mV
V
V
nA
μA
μA
μA
pF
ns
1.0
1.2
0.5
30
100
1.5
4
V
fr
forward recovery voltage
−
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
250
500
UNIT
K/W
K/W
1996 Sep 03
3
NXP Semiconductors
Product data sheet
High-speed double diode
GRAPHICAL DATA
1PS226
300
IF
(mA)
200
MBD033
handbook, halfpage
300
IF
MBG382
(mA)
(1)
(2)
(3)
single diode loaded
200
double diode loaded
100
100
0
0
100
T amb ( C)
o
0
200
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, halfpage
IR
(μA)
10
MBG380
handbook, halfpage
0.8
MBG446
Cd
(pF)
0.6
1
(1)
(2)
(3)
0.4
10
1
0.2
10
2
0
100
Tj (
o
C)
200
0
0
4
8
12
VR (V)
16
(1) V
R
= 80 V; maximum values.
(2) V
R
= 80 V; typical values.
(3) V
R
= 25 V; typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.4
Reverse current as a function of junction
temperature.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 03
4
京公网安备 11010802033920号
EEWORLD
