Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
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Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
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DISCRETE SEMICONDUCTORS
DATA SHEET
2PD601A series
NPN general purpose transistors;
50 V, 100 mA
Product data sheet
Supersedes data of 2002 Jun 26
2004 Feb 12
NXP Semiconductors
Product data sheet
NPN general purpose transistors; 50 V,
100 mA
FEATURES
•
Available in SOT323 (SC-70) and SOT346 (SC-59)
packages
•
Available in three different DC current gain versions
(Q, R, S).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN general purpose transistors (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
2PD601AQ
2PD601AR
2PD601AS
2PD601AQW
2PD601ARW
2PD601ASW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
SOT346
SOT346
SOT346
SOT323
SOT323
SOT323
EIAJ
SC-59
SC-59
SC-59
SC-70
SC-70
SC-70
ZQ
ZR
ZS
*6D
*6E
*6F
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
h
FE
2PD601A series
PARAMETER
collector-emitter
voltage
collector current (DC)
DC current gain
group Q
group R
group S
MIN. MAX. UNIT
−
−
160
210
290
50
100
260
340
460
V
mA
MARKING CODE
h
FE
GROUP
Q
R
S
Q
R
S
PINNING
TYPE NUMBER
2PD601AQ
2PD601AR
2PD601AS
2PD601AQW
2PD601ARW
2PD601ASW
1
Top view
2
2
MAM321
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
handbook, halfpage
DESCRIPTION
base
emitter
collector
2
3
3
1
3
2004 Feb 12
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors; 50 V,
100 mA
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
2PD601AQ
2PD601AR
2PD601AS
2PD601AQW
2PD601ARW
2PD601ASW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
SOT346
SOT323
T
stg
T
j
T
amb
Note
1. Refer to SOT346 (SC-59) and SOT323 (SC-70) standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
SOT346
SOT323
Note
1. Refer to SOT346 (SC-59) and SOT323 (SC-70) standard mounting conditions.
Soldering
Reflow soldering is the only recommended soldering method.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
−
−
−65
−
−65
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
plastic surface mounted package; 3 leads
−
DESCRIPTION
plastic surface mounted package; 3 leads
2PD601A series
VERSION
SOT346
SOT323
MIN.
MAX.
60
50
6
100
200
250
200
+150
150
+150
V
V
V
UNIT
mA
mA
mW
mW
°C
°C
°C
VALUE
500
625
UNIT
K/W
K/W
2004 Feb 12
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors; 50 V,
100 mA
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
group Q
group R
group S
V
CEsat
C
c
f
T
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector-emitter saturation voltage
collector capacitance
transition frequency
I
C
= 100 mA; I
B
= 10 mA; note 1
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 2 mA; V
CE
= 10 V;
f = 100 MHz
CONDITIONS
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 100 mA; V
CE
= 2 V; note 1
I
C
= 2 mA; V
CE
= 10 V
160
210
290
−
−
100
−
−
−
90
2PD601A series
MIN.
5
MAX.
10
10
−
260
340
460
250
3
−
UNIT
nA
μA
nA
mV
pF
MHz
2004 Feb 12
4