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SMBJ45A-Q

Description
TVS DIODE 45V 72.7V SMB
CategoryDiscrete semiconductor    diode   
File Size328KB,5 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Environmental Compliance
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SMBJ45A-Q Overview

TVS DIODE 45V 72.7V SMB

SMBJ45A-Q Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerBourns
package instructionR-PDSO-C2
Reach Compliance Codenot_compliant
Factory Lead Time15 weeks
Samacsys DescriptionSMBJ-Q Transient Voltage Suppressor Diode Series, Uni-Directional
Other featuresPRSM-MIN, UL RECOGNIZED
Maximum breakdown voltage55.3 V
Minimum breakdown voltage50 V
Breakdown voltage nominal value52.65 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage45 V
Maximum reverse current1 µA
Reverse test voltage45 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
PL
IA
NT
Features
n
Surface Mount SMB package
n
Standoff Voltage: 12 to 58 volts
n
Power Dissipation: 600 watts
n
RoHS compliant*
n
AEC-Q101 compliant**
F
RE
E
Applications
n
Protection of power buses
n
Protection of I/O interfaces
n
Overvoltage transient protection
n
Automotive
*R
oH
S
C
OM
– Entertainment applications
– Comfort applications
n
Telecom, computer, industrial and
consumer electronics applications
LE
AD
SMBJ-Q Transient Voltage Suppressor Diode Series
General Information
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR
IA E
NT
*
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB)
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 12 V up to 58 V. Typical fast
response times are less than 1.0 picosecond from 0 V to Breakdown Voltage.
Bourns
®
Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method)
(Note 3)
Operating Temperature Range
Storage Temperature Range
1.
2.
3.
Minimum Peak Pulse Power Dissipation (TP = 1 ms)
(Note 1,2)
Symbol
P
PK
I
FSM
T
J
Value
600
100
-55 to +150
-55 to +150
Unit
Watts
Amps
°C
°C
T
STG
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
Mounted on 5.0 mm
2
(0.03 mm thick) copper pads to each terminal.
8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
Asia-Pacific:
Tel: +886-2 2562-4117 • Email: asiacus@bourns.com
EMEA:
Tel: +36 88 520 390 • Email: eurocus@bourns.com
The Americas:
Tel: +1-951 781-5500 • Email: americus@bourns.com
www.bourns.com
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
**”Q” part number suffix indicates AEC-Q101 compliance.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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