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TSC966CT B0G

Description
TRANSISTOR, NPN, 400V, 0.3A, 100
Categorysemiconductor    Discrete semiconductor   
File Size181KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TSC966CT B0G Overview

TRANSISTOR, NPN, 400V, 0.3A, 100

TSC966CT B0G Parametric

Parameter NameAttribute value
Transistor typeNPN
Current - Collector (Ic) (Maximum)300mA
Voltage - collector-emitter breakdown (maximum)400V
Vce saturation value (maximum value) when different Ib,Ic1V @ 5mA,50mA
Current - collector cutoff (maximum)1µA
DC current gain (hFE) at different Ic, Vce (minimum value)100 @ 1mA,5V
Power - Max1W
Frequency - Transition50MHz
Operating temperature150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 standard body (!--TO-226AA)
Supplier device packagingTO-92
TSC966
NPN Silicon Planar High Voltage Transistor
TO-92
Pin Definition:
SOT-223
1. Emitter
2. Collector
3. Base
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
600V
400V
300mA
0.5V @ I
C
/ I
B
= 50mA / 5mA
Features
High BVceo, BVcbo
High current gain
Ordering Information
Part No.
TSC966CT B0G
TSC966CT A3G
TSC966CW RPG
Package
TO-92
TO-92
SOT-223
Packing
1,000pcs / Bulk
2,000pcs / Ammo
2,500pcs / 13” Reel
Epitaxial Planar Type
Absolute Maximum Rating
(T
A
=25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
TS
C9
No 66
t R CT
eco B0
mm G ,
A3
en
de G
d
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
o
Structure
Note: “G” denote for Halogen Free Product
Limit
Unit
V
V
V
V
A
W
o
o
Total Power Dissipation @ T
A
=25 C
DC
Pulse
TO-92
SOT-223
P
tot
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
J
T
STG
600
600
400
7
0.3
1
0.9
1
+150
- 55 to +150
C
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
I
C
= 50uA
I
C
= 100uA, V
BE
= 0
I
C
= 1mA
I
E
= 50uA
V
CB
= 600V
V
CE
= 400V
V
EB
= 7V
I
C
= 50mA, I
B
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 20mA
V
CE
= 10V, I
E
= 20mA
V
CB
= 20V, f=1MHz
Symbol
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
1
h
FE
2
f
T
Cob
Min
600
600
400
7
--
--
--
--
--
100
90
50
--
Typ
--
--
--
--
--
--
--
--
--
--
--
--
--
Max
--
--
--
--
0.5
1
1.5
0.5
1
--
300
--
7
Unit
V
V
V
V
uA
uA
uA
V
V
MHz
pF
Document Number: DS_P0000232
1
Version: E15

TSC966CT B0G Related Products

TSC966CT B0G TSC966CW RPG TSC966CT A3G
Description TRANSISTOR, NPN, 400V, 0.3A, 100 TRANSISTOR, NPN, 400V, 0.3A, 100 TRANSISTOR, NPN, 400V, 0.3A, 100
Transistor type NPN NPN NPN
Current - Collector (Ic) (Maximum) 300mA 300mA 300mA
Voltage - collector-emitter breakdown (maximum) 400V 400V 400V
Vce saturation value (maximum value) when different Ib,Ic 1V @ 5mA,50mA 500mV @ 5mA,50mA 1V @ 5mA,50mA
Current - collector cutoff (maximum) 1µA 1µA 1µA
DC current gain (hFE) at different Ic, Vce (minimum value) 100 @ 1mA,5V 100 @ 1mA,5V 100 @ 1mA,5V
Frequency - Transition 50MHz - 50MHz
Operating temperature 150°C(TJ) 150°C(TJ) 150°C(TJ)
Installation type Through hole surface mount Through hole
Package/casing TO-226-3, TO-92-3 standard body (!--TO-226AA) TO-261-4,TO-261AA TO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packaging TO-92 SOT-223 TO-92
Power - Max 1W - 1W

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