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DBL105GHC1G

Description
BRIDGE RECT 1PHASE 600V 1A DBL
CategoryDiscrete semiconductor    diode   
File Size177KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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DBL105GHC1G Overview

BRIDGE RECT 1PHASE 600V 1A DBL

DBL105GHC1G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage600 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDIP-T4
Maximum non-repetitive peak forward current40 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationDUAL
DBL101G - DBL107G
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 1000V Glass Passivated Bridge Rectifiers
FEATURES
- Ideal for printed circuit board
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DBL
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Polarity as marked on the body
Weight:
0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 1 A
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
C
J
R
θJL
R
θJA
T
J
T
STG
40
6.64
1.1
2
500
25
15
40
- 55 to +150
- 55 to +150
DBL
101G
50
35
50
DBL
102G
100
70
100
DBL
103G
200
140
200
DBL
104G
400
280
400
1
30
3.73
DBL
105G
600
420
600
DBL
106G
800
560
800
DBL
107G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
μA
pF
°C/W
°C
°C
Typical junction capacitance Per Leg (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
Note 2: Measure at 1.0MHz and Applied Reverse Voltage of 4.0 Volts D.C.
Document Number: DS_D1310043
Version: Q15
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