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BZT52C4V7-G RHG

Description
DIODE ZENER 4.7V 350MW SOD123
Categorysemiconductor    Discrete semiconductor   
File Size236KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BZT52C4V7-G RHG Overview

DIODE ZENER 4.7V 350MW SOD123

BZT52C4V7-G RHG Parametric

Parameter NameAttribute value
Voltage - Zener (nominal) (Vz)4.7V
Tolerance±5%
Power - Max350mW
Impedance (max) (Zzt)80 Ohms
Current at different Vr - Reverse leakage current3µA @ 2V
Voltage at different If - Forward (Vf900mV @ 10mA
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casingSOD-123
Supplier device packagingSOD-123
BZT52C2V4-G - BZT52C43-G
Taiwan Semiconductor
Small Signal Product
5% Zener Voltage Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection: 2.4V to 43V
- Surface Mount Device Type
- Moisture sensitivity level (MSL): 1
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
SOD-123
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Forward Voltage (Note2)
Power Dissipation (Note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
@ IF = 10mA
SYMBOL
V
F
P
D
R
θJA
T
J
T
STG
VALUE
0.9
350
357
150
- 55 to +150
UNIT
V
mW
°C/W
°C
°C
Notes: 1. Device mounted on ceramic PCB: 7.6mm X 9.4mm X 0.87mm with pad areas 25mm
2
2. Short duration test pulse used to minimize self-heating effect
Version: B1601
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