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BC337-25 B1G

Description
TRANSISTOR, NPN, 45V, 0.8A, 160A
Categorysemiconductor    Discrete semiconductor   
File Size267KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BC337-25 B1G Overview

TRANSISTOR, NPN, 45V, 0.8A, 160A

BC337-25 B1G Parametric

Parameter NameAttribute value
Transistor typeNPN
Current - Collector (Ic) (Maximum)800mA
Voltage - collector-emitter breakdown (maximum)45V
Vce saturation value (maximum value) when different Ib,Ic700mV @ 50mA,500mA
Current - collector cutoff (maximum)100nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)160 @ 100mA,5V
Power - Max625mW
Frequency - Transition100MHz
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 standard body (!--TO-226AA)
Supplier device packagingTO-92
BC337-16/25/40 thru BC338-16/25/40
Taiwan Semiconductor
Small Signal Product
NPN Transistor
FEATURES
- For switching and AF amplifier applications
- These types are subdivided into three groups -16, -25 and -40, according to their current gain
- Moisture sensitivity level 1
- Driver transistor
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: TO-92 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 190 mg (approximately)
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Total Power dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Junction and Storage Temperature Range
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Base Cutoff Current
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Transition Frequency
Output Capacitance
BC337
BC338
BC337
BC338
BC337
BC338
BC337
BC338
I
C
= 100μA
I
C
= 2mA
I
E
= 100μA
V
CB
=50V
V
CB
=30V
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=300mA
V
CE
=5V, I
C
=10mA,
f=50MHz
V
CB
=10V, f=1MHz
Current Gain Group: -16
DC Current Gain
V
CE
= 5V,
-25
I
C
= 100mA
-40
V
CE
= 5V,
I
C
= 300mA
BC337
BC338
BC337
BC338
BC337
BC338
SYMBOL
P
TOT
V
CBO
V
CEO
V
EBO
I
C
I
CM
T
J
, T
STG
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
V
BE(on)
f
T
C
ob
MIN
50
30
45
25
5
5
-
-
-
-
100
12
100
160
h
FE
250
60
VALUE
625
50
30
45
25
5
5
800
1000
-55 to +150
MAX
-
-
-
100
100
0.7
1.2
-
-
250
400
630
-
V
UNIT
mW
V
V
V
mA
mA
°C
UNIT
V
V
V
nA
V
V
MHz
pF
Document Number: DS_S1407004
Version: B14

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