RN1314∼RN1318
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1314, RN1315, RN1316
RN1317, RN1318
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2314 to RN2318
Unit: mm
Equivalent Circuit and Bias Resister Values
Type No.
RN1314
RN1315
RN1316
RN1317
RN1318
R1 (kΩ)
1
2.2
4.7
10
47
R2 (kΩ)
10
10
10
4.7
10
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006g (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1314 to 1318
RN1314
RN1315
Emitter-base voltage
RN1316
RN1317
RN1318
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1314 to 1318
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
5
6
7
15
25
100
100
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2002-11
1
2014-03-01
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