BZT52B2V4-G - BZT52B43-G
Taiwan Semiconductor
410mW 2% Zener Diodes
FEATURES
●
●
●
●
Wide zener voltage range selection: 2.4V to 43V
VZ Tolerance Selection of ± 2%
Surface device type mountin
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
tot
V
F
at I
F
=10mA
T
J
Max.
Package
Configuration
VALUE
2.4-43
5
410
0.9
150
UNIT
V
mA
mW
V
°C
APPLICATIONS
● Low voltage stabilzers or voltage references
● Adapters
● On-board DC/DC converter
SOD-123
Single dice
MECHANICAL DATA
● Case: SOD-123
● Molding compound: UL flammability classification
rating 94V-0
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 10.54mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=10mA
Total power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
tot
T
J
T
STG
PART NUMBER
0.9
410
-55 to +150
-55 to +150
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
357
UNIT
°C/W
1
Version:F1612
BZT52B2V4-G - BZT52B43-G
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
TYPICAL
ZENER
VOLTAGE
PART
NUMBER
MARKING
CODE
V
Z
@ I
ZT
V
Nom.
BZT52B2V4-G
BZT52B2V7-G
BZT52B3V0-G
BZT52B3V3-G
BZT52B3V6-G
BZT52B3V9-G
BZT52B4V3-G
BZT52B4V7-G
BZT52B5V1-G
BZT52B5V6-G
BZT52B6V2-G
BZT52B6V8-G
BZT52B7V5-G
BZT52B8V2-G
BZT52B9V1-G
BZT52B10-G
BZT52B11-G
BZT52B12-G
BZT52B13-G
BZT52B15-G
BZT52B16-G
BZT52B18-G
BZT52B20-G
BZT52B22-G
BZT52B24-G
BZT52B27-G
BZT52B30-G
BZT52B33-G
BZT52B36-G
BZT52B39-G
BZT52B43-G
2WX
2W1
2W2
2W3
2W4
2W5
2W6
2W7
2W8
2W9
2WA
2WB
2WC
2WD
2WE
2WF
2WG
2WH
2WI
2WJ
2WK
2WL
2WM
2WN
2WO
2WP
2WQ
2WR
2WS
2WT
2WU
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
Min.
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
Max.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
I
ZT
mA
Z
ZT
@
I
ZT
Ω
Max.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
130
Z
ZK
@
I
ZK
Ω
Max.
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
350
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
I
ZK
mA
V
Z
@ I
ZT
µA
Max.
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
29.4
V
Min.
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
36.4
mV/°C
Max.
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
45.2
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
TEST
CURRENT
REGULAR
TEST
LEAKAGE TEMPERATURE
@ I
ZTC
I
ZTC
mA
TEST
IMPEDANCE CURRENT CURRENT
COEFFICIENT CURRENT
9.80 10.20
10.78 11.22
11.76 12.24
12.74 13.26
14.70 15.30
15.68 16.32
17.64 18.36
19.60 20.40
21.56 22.44
23.52 24.48
26.46 27.54
29.40 30.60
32.34 33.66
35.28 36.72
38.22 39.78
41.46 42.84
2
Version:F1612
BZT52B2V4-G - BZT52B43-G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
BZT52BXXX-G
(Note 1&2)
PACKING
CODE
RH
PACKING CODE
SUFFIX
G
PACKAGE
SOD-123
PACKING
3K / 7" Reel
Notes:
1. "xxx" defines voltage from 2.4V (BZT52B2V4-G) to 43V (BZT52B43-G)
2. Whole series with green compound
EXAMPLE
EXAMPLE P/N
BZT52B43-G RHG
PART NO.
BZT52B43-G
PACKING CODE
RH
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
3
Version:F1612
BZT52B2V4-G - BZT52B43-G
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Power Dissipation Curve
500
450
400
Power Dissipation (mW)
350
Iz (mA)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
0
0
1
2
3
4
5
Vz (V)
6
7
8
9
10
10
30
3V3
40
4V7
50
2V7
3V9
5V6
6V8
Fig.2 Forward Characteristics
8V2
20
Test currect
Iz 5mA
Ambient Temperature (°C)
Fig.3 Admissible Power Dissipation VS.
Ambient Temperature
30
10
12
15
20
Iz (mA)
18
22
10
Test
currect
Iz 5mA
27
33
0
0
10
20
Vz (V)
30
40
4
Version:F1612
Microchip MCU
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