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1.5KE47CARL

Description
1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-201
CategoryDiscrete semiconductor    diode   
File Size143KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

1.5KE47CARL Overview

1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-201

1.5KE47CARL Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
Parts packaging codeDO-201
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codecompliant
Factory Lead Time9 weeks
Samacsys Confidence3
Samacsys StatusReleased
Samacsys PartID221677
Samacsys Pin Count2
Samacsys Part CategoryDiode
Samacsys Package CategoryDiodes, Axial Diameter Horizontal Mounting
Samacsys Footprint NameDO-201
Samacsys Released Date2016-03-17 18:36:43
Is SamacsysN
Other featuresUL RECOGNIZED
Maximum breakdown voltage49.4 V
Minimum breakdown voltage44.7 V
Breakdown voltage nominal value47 V
Shell connectionISOLATED
Maximum clamping voltage84 V
ConfigurationSINGLE
Minimum diode capacitance1025 pF
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-201
JESD-30 codeO-PALF-W2
JESD-609 codee3
Humidity sensitivity levelNOT APPLICABLE
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40.2 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
®
1.5KE6V8A/440A
1.5KE6V8CA/440CA
TRANSIL
TM
FEATURES
s
s
s
s
s
s
PEAK PULSE POWER : 1500 W (10/1000µs)
BREAKDOWN VOLTAGE RANGE :
From 6.8V to 440 V
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particularly
suited to protect voltage sensitive devices such
as MOS Technology and low voltage supplied
IC’s.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol
P
PP
P
I
FSM
T
stg
T
j
T
L
Parameter
Peak pulse power dissipation (see note 1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current
for unidirectional types
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s at 5mm
from case
Tj initial = T
amb
T
amb
= 75°C
tp = 10ms
Tj initial = T
amb
Value
1500
5
200
- 65 to + 175
175
230
Unit
W
W
A
°C
°C
°C
DO-201
Note 1
: For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
R
th (j-l)
R
th (j-a)
Junction to leads
Junction to ambient on printed circuit. L
lead
= 10 mm
Parameter
Value
20
75
Unit
°C/W
°C/W
February 2002- Ed: 3A
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