DMN3025LFDF
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
ADVANCE INFORMATION
BV
DSS
R
DS(ON)
max
20.5mΩ @ V
GS
= 10V
30V
30mΩ @ V
GS
= 4.5V
7.4A
I
D
max
T
A
= +25°
C
8.3A
Features and Benefits
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm
2
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
General Purpose Interfacing Switch
Power Management Functions
U-DFN2020-6
(Type F)
Mechanical Data
Case: U-DFN2020-6 (Type F)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.0065 grams (Approximate)
D
G
Pin1
Top View
Bottom View
Pin Out
Bottom View
S
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMN3025LFDF-7
DMN3025LFDF-13
Notes:
Case
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
S6
S6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2016
D
Jan
1
Feb
2
2017
E
Mar
3
2018
F
Apr
4
May
5
YM
2019
G
Jun
6
2020
H
Jul
7
Aug
8
2021
I
Sep
9
2022
J
Oct
O
Nov
N
2023
K
Dec
D
DMN3025LFDF
D
atasheet number: DS37737 Rev. 1 - 2
1 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DMN3025LFDF
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current (L = 0.1mH) (Note 7)
Avalanche Energy (L = 0.1mH) (Note 7)
T
A
= +25C
T
A
= +70C
T
A
= +25C
T
A
= +70C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AS
E
AS
Value
30
±20
8.3
6.6
9.9
7.9
3
40
15
11
Units
V
V
A
A
A
A
A
mJ
ADVANCE INFORMATION
Continuous Drain Current (Note 6) V
GS
= 10V
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°
C
T
A
= +70°
C
Steady State
t<10s
T
A
= +25°
C
T
A
= +70°
C
Steady State
t<10s
Steady State
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
0.66
0.42
173
133
2.1
1.3
62
43
9.4
-55 to +150
Units
W
°
C/W
W
°
C/W
°
C/W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
30
-
-
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
0.70
641
66
50
2.2
6
13.2
1.7
2.2
3.3
4.4
22.3
5.3
11.4
8.2
Max
-
1
±100
2.0
20.5
30
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
m
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 7A
V
GS
= 4.5V, I
D
= 7A
V
GS
= 0V, I
S
= 1A
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 15V, I
D
= 10A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
pF
nC
ns
V
DD
= 15V, V
GS
= 10V,
R
G
= 6Ω, I
D
= 1A
I
F
= 11A, di/dt = 100A/μs
I
F
= 11A, di/dt = 100A/μs
ns
nC
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°
C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN3025LFDF
D
atasheet number: DS37737 Rev. 1 - 2
2 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DMN3025LFDF
30.0
V
GS
= 3.5V
25.0
I
D
, DRAIN CURRENT (A)
V
GS
= 4.0V
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
20.0
V
GS
= 5.0V
V
GS
= 3.0V
15.0
25
30
V
DS
= 5.0V
ADVANCE INFORMATION
20
15
10.0
V
GS
= 10V
10
T
J
= 150
o
C
5
T
J
= 125
o
C
T
J
= 85
o
C
0
T
J
= 25
o
C
T
J
= -55
o
C
4
5.0
V
GS
= 2.5V
0.0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
1.8
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0
V
GS
= 10V
V
GS
= 4.5V
2
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 4. Typical On-Resistance vs Drain Current and
Temperature
0.04
0.035
0.03
0.025
0.02
0.015
V
GS
= 10V, I
D
= 10A
0.01
0.005
0
V
GS
= 4.5V, I
D
= 5A
0
5
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 85
o
C
T
J
= 125
o
C
V
GS
= 4.5V
T
J
= 150
o
C
1.6
1.4
V
GS
= 4.5V, I
D
= 5A
1.2
1
V
GS
= 10V, I
D
= 10A
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 5. On-Resistance Variation with Temperature
3 of 6
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-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6.On-Resistance Variation with Temperature
June 2016
© Diodes Incorporated
DMN3025LFDF
D
atasheet number: DS37737 Rev. 1 - 2
DMN3025LFDF
3
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
30
2.5
I
S
, SOURCE CURRENT (A)
25
ADVANCE INFORMATION
2
I
D
= 1mA
1.5
I
D
= 250µA
20
15
1
10
0.5
5
V
GS
= 0V, T
J
= 25
o
C
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. Gate Threshold Variation vs Junction
Temperature
10000
f = 1MHz
C
T
, JUNCTION CAPACITANCE (pF)
0
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8. Diode Forward Voltage vs. Current
10
8
1000
C
iss
V
GS
(V)
100
C
oss
6
4
V
DS
= 15V, I
D
= 10A
C
rss
2
10
0
2
6
8 10 12 14 16 18
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Typical Junction Capacitance
1
r(t), TRANSIENT THERMAL RESISTANCE
4
20
0
0
2
4
6
8
Q
g
(nC)
10
12
14
Figure 10. Gate Charge
D=0.9
D=0.7
D=0.3
0.1
D=0.1
D=0.05
D=0.5
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 174℃/W
Duty Cycle, D = t1/t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 11. Transient Thermal Resistance
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10
100
1000
DMN3025LFDF
D
atasheet number: DS37737 Rev. 1 - 2
June 2016
© Diodes Incorporated
DMN3025LFDF
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
ADVANCE INFORMATION
A
A1
A3
Seating Plane
D
e3
e4
k2
D2a
E
E2a
k
D2
k1
z1
z2
E2
e2
L
z(4x)
e
b
U-DFN2020-6
(Type F)
Dim
Min Max
Typ
A
0.57 0.63
0.60
A1
0.00 0.05
0.03
A3
-
-
0.15
b
0.25 0.35
0.30
D
1.95 2.05
2.00
D2
0.85 1.05
0.95
D2a
0.33 0.43
0.38
E
1.95 2.05
2.00
E2
1.05 1.25
1.15
E2a
0.65 0.75
0.70
e
0.65 BSC
e2
0.863 BSC
e3
0.70 BSC
e4
0.325 BSC
k
0.37 BSC
k1
0.15 BSC
k2
0.36 BSC
L
0.225 0.325 0.275
z
0.20 BSC
z1
0.110 BSC
z2
0.20 BSC
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
X3
C
X
Y
Dimensions
C
X
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1
Y4
X1
Value
(in mm)
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
Pin1
X2
DMN3025LFDF
D
atasheet number: DS37737 Rev. 1 - 2
5 of 6
www.diodes.com
June 2016
© Diodes Incorporated
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