PMPB27EPA
27 March 2018
30 V, P-channel Trench MOSFET
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
Trench MOSFET technology
Side wettable flanks for optical solder inspection
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
High-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DS
V
GS
I
D
R
DSon
[1]
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Conditions
T
j
= 25 °C
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; I
D
= -6.1 A; T
j
= 25 °C
[1]
Min
-
-20
-
-
Typ
-
-
-
24
Max
-30
20
-6.1
29
2
Unit
V
V
A
mΩ
Static characteristics
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
Nexperia
PMPB27EPA
30 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
4
5
6
7
8
Symbol Description
D
D
G
S
D
D
D
S
drain
drain
gate
source
drain
drain
drain
source
Simplified outline
1
2
3
7
6
5
4
G
S
Graphic symbol
D
8
Transparent top view
017aaa257
DFN2020MD-6 (SOT1220)
6. Ordering information
Table 3. Ordering information
Type number
PMPB27EPA
Package
Name
Description
Version
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220
package; no leads; 6 terminals
7. Marking
Table 4. Marking codes
Type number
PMPB27EPA
Marking code
4P
PMPB27EPA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
27 March 2018
2 / 14
Nexperia
PMPB27EPA
30 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
T
j
T
amb
T
stg
I
S
V
ESD
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge
voltage
non-repetitive drain-
source avalanche
energy
T
amb
= 25 °C
HBM
[1]
[2]
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
amb
= 25 °C
T
sp
= 25 °C
[1]
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
-
-55
-55
-65
-
-
Max
-30
20
-6.1
-3.9
-25
1.7
12.5
150
150
150
-1.9
1000
Unit
V
V
A
A
A
W
W
°C
°C
°C
A
V
Source-drain diode
ESD maximum rating
Avalanche ruggedness
E
DS(AL)S
T
j(init)
= 25 °C; I
D
= -1.7 A; DUT in
avalanche (unclamped)
-
26.8
mJ
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
Measured between all pins.
2
PMPB27EPA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
27 March 2018
3 / 14
Nexperia
PMPB27EPA
30 V, P-channel Trench MOSFET
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
-10
2
I
D
(A)
-10
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
017aaa827
Limit R
DSon
= V
DS
/I
D
t
p
= 100 µs
t
p
= 1 ms
-1
DC; T
sp
= 25 °C
-10
-1
DC; T
amb
= 25 °C;
drain mounting pad 6 cm
2
t
p
= 10 ms
t
p
= 100 ms
-10
-2
-10
-2
-10
-1
-1
-10
V
DS
(V)
-10
2
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
PMPB27EPA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
27 March 2018
4 / 14
Nexperia
PMPB27EPA
30 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-a)
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
235
67
5
Max
270
74
10
Unit
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
10
3
Z
th(j-a)
(K/W)
10
2
017aaa542
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
0.05
10
0.01
0.02
0
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 4.
10
3
Z
th(j-a)
(K/W)
10
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
duty cycle = 1
0.75
0.33
0.5
0.25
0.1
10
0.2
0.05
0
1
10
-3
0.02
0.01
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMPB27EPA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
27 March 2018
5 / 14
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