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RJH60F5BDPQ-A0#T0

Description
IGBT 600V 80A 260.4W TO-247A
Categorysemiconductor    Discrete semiconductor   
File Size96KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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RJH60F5BDPQ-A0#T0 Overview

IGBT 600V 80A 260.4W TO-247A

RJH60F5BDPQ-A0#T0 Parametric

Parameter NameAttribute value
IGBT typechannel
Voltage - collector-emitter breakdown (maximum)600V
Current - Collector (Ic) (Maximum)80A
Vce(on) when different Vge,Ic1.8V @ 15V,40A
Power - Max260.4W
switching energy-
input typestandard
Td (on/off) value at 25°C53ns/95ns
Test Conditions400V, 30A, 5 Ohm, 15V
Reverse recovery time (trr)25ns
Operating temperature150°C(TJ)
Installation typeThrough hole
Package/casingTO-247-3
Supplier device packagingTO-247A
Preliminary
Datasheet
RJH60F5BDPQ-A0
600V - 40A - IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.37 V typ. (I
C
= 40 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 68 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0631EJ0100
Rev.1.00
Feb 17, 2012
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
5
s,
duty cycle
1%
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
j-c
j-cd
Tj
Tstg
Ratings
600
±30
80
40
160
100
260.4
0.48
1.1
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0631EJ0100 Rev.1.00
Feb 17, 2012
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