1N6267A Series
1500 Watt Mosorbt Zener
Transient Voltage
Suppressors
Unidirectional*
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Mosorb devices are designed to protect voltage sensitive
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Features
Cathode
Anode
AXIAL LEAD
CASE 41A
PLASTIC
•
•
•
•
•
•
•
•
MARKING DIAGRAM
A
1.5KE
xxxA
1N6
xxxA
YYWWG
G
A
1.5KExxxA
1N6xxxA
YY
WW
= Assembly Location
= ON Device Code
= JEDEC Device Code
= Year
= Work Week
=
(See Table on Page 3)
G
= Pb−Free Package
(Note: Microdot may be in either location)
Working Peak Reverse Voltage Range − 5.8 V to 214 V
Peak Power − 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb−Free Packages are Available
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
ORDERING INFORMATION
Device
1.5KExxxA
1.5KExxxAG
1.5KExxxARL4
1.5KExxxARL4G
1N6xxxA
1N6xxxAG
1N6xxxARL4
1N6xxxARL4G
Package
Axial Lead
Axial Lead
(Pb−Free)
Axial Lead
Axial Lead
(Pb−Free)
Axial Lead
Axial Lead
(Pb−Free)
Axial Lead
Axial Lead
(Pb−Free)
Shipping
†
500 Units/Box
500 Units/Box
1500/Tape & Reel
1500/Tape & Reel
500 Units/Box
500 Units/Box
1500/Tape & Reel
1500/Tape & Reel
230°C, 1/16 in from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
1
July, 2005 − Rev. 7
Publication Order Number:
1N6267A/D
1N6267A Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
≤
25°C
Steady State Power Dissipation
@ T
L
≤
75°C, Lead Length = 3/8 in
Derated above T
L
= 75°C
Thermal Resistance, Junction−to−Lead
Forward Surge Current (Note 2) @ T
A
= 25°C
Operating and Storage
Temperature Range
Symbol
P
PK
P
D
Value
1500
5.0
20
R
qJL
I
FSM
T
J
, T
stg
20
200
− 65 to +175
Unit
W
W
mW/°C
°C/W
A
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derated above T
A
= 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
NOTES: Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max., I
F
(Note 3) = 100 A)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coefficient of V
BR
Forward Current
Forward Voltage @ I
F
I
PP
V
C
V
BR
V
RWM
I
R
V
F
I
T
V
I
F
I
Uni−Directional TVS
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2
1N6267A Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 100 A)
JEDEC
Device
†
(Note 4)
1N6267A, G
1N6268A, G
1N6269A, G
1N6270A, G
1N6271A, G
1N6272A, G
1N6273A, G
1N6274A, G
1N6275A, G
1N6276A, G
1N6277A, G
1N6278A, G
1N6279A, G
1N6280A, G
1N6281A, G
1N6282A, G
1N6283A, G
1N6284A, G
1N6285A, G
1N6286A, G
1N6287A, G
1N6288A, G
1N6289A, G
1N6290A, G
1N6291A, G
1N6292A, G
1N6293A, G
1N6294A, G
1N6295A, G
1N6296A, G
1N6297A, G
1N6298A, G
1N6299A, G
1N6300A, G
1N6301A, G
1N6302A, G*
1N6303A, G
V
RWM
(Note 5)
(Volts)
5.8
6.4
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53
58.1
64.1
70.1
77.8
85.5
94
102
111
128
136
145
154
171
185
214
Breakdown Voltage
I
R
@ V
RWM
(mA)
1000
500
200
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
V
BR
(Note 6)
(Volts)
Min
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95
105
114
124
143
152
162
171
190
209
237
Nom
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
170
180
200
220
250
Max
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
231
263
@ I
T
(mA)
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
C
@ I
PP
(Note 7)
V
C
(Volts)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77
85
92
103
113
125
137
152
165
179
207
219
234
246
274
328
344
I
PP
(A)
143
132
124
112
103
96
90
82
71
67
59.5
54
49
45
40
36
33
30
28
25.3
23.2
21.4
19.5
17.7
16.3
14.6
13.3
12
11
9.9
9.1
8.4
7.2
6.8
6.4
6.1
5.5
4.6
5
QV
BR
(%/°C)
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.09
0.092
0.094
0.096
0.097
0.098
0.099
0.1
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.109
0.109
Device
†
1.5KE6.8A, G
1.5KE7.5A, G
1.5KE8.2A, G
1.5KE9.1A, G
1.5KE10A, G
1.5KE11A, G
1.5KE12A, G
1.5KE13A, G
1.5KE15A, G
1.5KE16A, G
1.5KE18A, G
1.5KE20A, G
1.5KE22A,
1.5KE24A,
1.5KE27A,
1.5KE30A,
G
G
G
G
1.5KE33A, G
1.5KE36A, G
1.5KE39A, G
1.5KE43A, G
1.5KE47A, G
1.5KE51A, G
1.5KE56A, G
1.5KE62A, G
1.5KE68A,
1.5KE75A,
1.5KE82A,
1.5KE91A,
G
G
G
G
1.5KE100A, G
1.5KE110A, G
1.5KE120A, G
1.5KE130A, G
1.5KE150A,
1.5KE160A,
1.5KE170A,
1.5KE180A,
G
G
G
G
1.5KE200A, G
1.5KE220A, G
1.5KE250A, G
Devices listed in
bold, italic
are ON Semiconductor Preferred devices.
Preferred
devices are recommended choices for future use and best overall value.
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. Indicates JEDEC registered data
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the dc or continuous peak operating voltage level.
6. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C
7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
†The “G” suffix indicates Pb−Free package available.
*Not Available in the 1500/Tape & Reel
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3
1N6267A Series
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T = 25
°
C
A
100
PPK , PEAK POWER (kW)
100
80
60
40
20
0
0
25
50
75
100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
10
1
0.1
ms
1
ms
10
ms
100
ms
1 ms
10 ms
t
P
, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
10,000
MEASURED @
ZERO BIAS
10,000
1N6267A/1.5KE6.8A
through
1N6303A/1.5KE200A
MEASURED @
ZERO BIAS
C, CAPACITANCE (pF)
1000
C, CAPACITANCE (pF)
1000
MEASURED @ V
RWM
100
MEASURED @ V
RWM
100
10
1
10
100
1000
10
1
10
100
1000
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PD , STEADY STATE POWER DISSIPATION (WATTS)
3/8″
5
4
3
2
1
0
0
25
50
75
100 125 150 175
T
L
, LEAD TEMPERATURE (°C)
200
0
0
IPP, VALUE (%)
3/8″
100
t
r
PEAK VALUE − I
PP
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
tr
≤
10
ms
HALF VALUE −
50
t
P
I
PP
2
1
2
t, TIME (ms)
3
4
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
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4
1N6267A Series
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1000
500
IT , TEST CURRENT (AMPS)
200
100
50
20
10
5
2
1
0.3 0.5 0.7 1
2
3
5 7 10
20 30
DV
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
T
L
= 25°C
t
P
= 10
ms
V
BR(NOM)
= 6.8 to 13 V
20 V
43 V
24 V
1000
500
IT , TEST CURRENT (AMPS)
200
100
50
20
10
5
2
1
0.3
0.5 0.7 1
2
3
5 7 10
20 30
DV
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
180 V
120 V
T
L
= 25°C
t
P
= 10
ms
1.5KE6.8CA
through
1.5KE200CA
V
BR(NOM)
= 6.8 to 13 V
20 V
24 V
43 V
75 V
Figure 6. Dynamic Impedance
1
0.7
0.5
0.3
DERATING FACTOR
0.2
0.1
0.07
0.05
0.03
0.02
10
ms
0.01
0.1
0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50
100
PULSE WIDTH
10 ms
1 ms
100
ms
Figure 7. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
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5
Embedded System
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