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BAS21LDYL

Description
BAS21LD/SOD882/SOD2
Categorysemiconductor    Discrete semiconductor   
File Size209KB,12 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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BAS21LDYL Overview

BAS21LD/SOD882/SOD2

BAS21LDYL Parametric

Parameter NameAttribute value
Diode typeStandard type, reverse polarity
Current - average rectification (Io)330mA(DC)
speedFast recovery = < 500 ns, > 200mA (Io)
Capacitance at different Vr, F2pF @ 0V,1MHz
Installation typesurface mount
Package/casing2-XDFN
Supplier device packaging2-DFN1006D (0.6x1.0)
Operating Temperature - Junction150°C (maximum)
BAS21LD
28 February 2018
High-voltage switching diode
Product data sheet
1. General description
High-voltage switching diode, encapsulated in an leadless ultra small DFN1006D-2 (SOD882D)
Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
2. Features and benefits
High switching speed: t
rr
≤ 50 ns
Low leakage current: I
R
≤ 100 nA
High reverse voltage V
R
≤ 200 V
Low capacitance: C
d
≤ 2 pF
Ultra small and leadless SMD plastic package
Soldarable side pads
Package height typ. 0.37 mm
AEC-Q101 qualified
3. Applications
High-speed switching
General-purpose switching
Voltage clamping
Reverse polarity protection
4. Quick reference data
Table 1. Quick reference data
Symbol
I
F
V
R
V
RRM
V
F
I
R
t
rr
[1]
Parameter
forward current
reverse voltage
repetitive peak reverse
voltage
forward voltage
reverse current
reverse recovery time
Conditions
T
j
= 25 °C
[1]
Min
-
-
-
Typ
-
-
-
-
-
-
Max
330
200
250
1.25
100
50
Unit
mA
V
V
V
nA
ns
I
F
= 200 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
V
R
= 200 V; pulsed; T
j
= 25 °C
I
F
= 30 mA; I
R
= 30 mA; R
L
= 100 Ω;
I
R(meas)
= 3 mA; T
j
= 25 °C
-
-
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

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