BZT52 series
Rev. 1 — 16 March 2017
Single Zener diodes in a SOD123 package
Product data sheet
1
Product profile
1.1 General description
General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD)
plastic package.
1.2 Features and benefits
•
•
•
•
•
Total power dissipation: ≤ 590 mW
Wide working voltage range: nominal 2.4 V to 75 V (E24 range)
Small plastic package suitable for surface-mounted design
Low differential resistance
AEC-Q101 qualified
1.3 Applications
•
General regulation functions
1.4 Quick reference data
Table 1. Quick reference data
Symbol
V
F
P
tot
Parameter
forward voltage
total power dissipation
Conditions
I
F
= 10 mA
T
amb
≤ 25 °C
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
0.9
350
590
Unit
V
mW
mW
[1]
[2]
[3]
Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Nexperia
Single Zener diodes in a SOD123 package
BZT52 series
2
Pinning information
Description
cathode
anode
[1]
Table 2. Pinning
Pin Symbol
1
2
K
A
Simplified outline
1
2
Graphic symbol
1
2
006aaa152
[1]
The marking bar indicates the cathode.
3
Ordering information
Package
Name
Description
plastic surface-mounted package; 2 leads
Table 3. Ordering information
Type number
BZT52-C2V4 to BZT52-
[1]
C75
[1]
Version
SOD123
-
The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.
4
Marking
Marking
code
C1
C2
C3
C4
C5
C6
C7
C8
C9
CA
Table 4. Marking codes
Type
number
BZT52-C2V4
BZT52-C2V7
BZT52-C3V0
BZT52-C3V3
BZT52-C3V6
BZT52-C3V9
BZT52-C4V3
BZT52-C4V7
BZT52-C5V1
BZT52-C5V6
Type
number
BZT52-C6V2
BZT52-C6V8
BZT52-C7V5
BZT52-C8V2
BZT52-C9V1
BZT52-C10
BZT52-C11
BZT52-C12
BZT52-C13
BZT52-C15
Marking
code
CB
CC
CD
CE
CF
CG
CH
CJ
CK
CL
Type
number
BZT52-C16
BZT52-C18
BZT52-C20
BZT52-C22
BZT52-C24
BZT52-C27
BZT52-C30
BZT52-C33
BZT52-C36
BZT52-C39
Marking
code
CM
CN
CP
CQ
CR
CS
CT
CU
CV
CW
Type
number
BZT52-C43
BZT52-C47
BZT52-C51
BZT52-C56
BZT52-C62
BZT52-C68
BZT52-C75
-
-
-
Marking
code
CY
D1
D2
D3
D4
D5
D6
-
-
-
BZT52_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 16 March 2017
2 / 13
Nexperia
Single Zener diodes in a SOD123 package
BZT52 series
5
Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
P
ZSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
forward current
non-repetitive peak reverse current
non-repetitive peak power
dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
[1]
Max
250
Unit
mA
see Table 8, 9
and 10
40
350
590
150
+150
+150
°C
°C
W
mW
mW
-
-
-
-
−55
−65
T
amb
≤ 25 °C
[2]
[3]
t
p
= 100 μs; square wave; T
j
= 25 °C prior to surge.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
6
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to solder point
Table 6. Thermal characteristics
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
350
210
55
Unit
K/W
K/W
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB),single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Soldering point of cathode tab.
7
Characteristics
Table 7. Characteristics
T
j
= 25 °C unless otherwise specified.
Symbol Parameter
V
F
[1]
Conditions
I
F
= 10 mA
[1]
Min
-
Typ
-
Max
0.9
Unit
V
forward voltage
Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
BZT52_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 16 March 2017
3 / 13
Nexperia
Single Zener diodes in a SOD123 package
Table 8. Characteristics per type; BZT52-C2V4 to BZT52-C24
T
j
= 25 °C unless otherwise specified.
BZT52 series
BZT52 Sel Working
-xxx
voltage
V
Z
(V);
I
Z
= 5 mA
Min
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
[1]
[2]
Maximum
differential
resistance
r
dif
(Ω)
Reverse
current
I
R
(μA)
Temperature Diode
capacitance
coefficient
[1]
S
Z
(mV/K);
C
d
(pF)
I
Z
= 5 mA
Max
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7
8
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
Non-
repetitive
peak reverse
current
[2]
I
ZSM
(A)
Max
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
Max
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
I
Z
= 1 mA I
Z
= 5 mA Max
400
500
500
500
500
500
500
500
480
400
150
80
80
80
100
70
70
90
110
110
170
170
220
220
220
85
83
95
95
95
95
95
78
60
40
10
8
10
10
10
10
10
10
10
15
20
20
20
25
30
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
V
R
(V) Min
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
f = 1 MHz; V
R
= 0 V.
t
p
= 100 μs; T
amb
= 25 °C.
BZT52_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 16 March 2017
4 / 13
Nexperia
Single Zener diodes in a SOD123 package
Table 9. Characteristics per type; BZT52-C27 to BZT52-C51
T
j
= 25 °C unless otherwise specified.
BZT52 series
BZT52 Sel Working
-xxx
voltage
V
Z
(V);
I
Z
= 2 mA
Min
27
30
33
36
39
43
47
51
[1]
[2]
Maximum
differential
resistance
r
dif
(Ω)
Reverse
current
I
R
(μA)
Temperature Diode
capacitance
coefficient
[1]
C
d
(pF)
S
Z
(mV/K);
I
Z
= 5 mA
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
Max
50
50
45
45
45
40
40
40
Non-
repetitive
peak reverse
current
[2]
I
ZSM
(A)
Max
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Max
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
I
Z
= 1 mA I
Z
= 5 mA Max
250
250
250
250
300
325
325
350
40
40
40
60
75
80
90
100
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
R
(V) Min
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
C
C
C
C
C
C
C
C
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
f = 1 MHz; V
R
= 0 V.
t
p
= 100 μs; T
amb
= 25 °C.
Table 10. Characteristics per type; BZT52-C56 to BZT52-C75
T
j
= 25 °C unless otherwise specified.
BZT52 Sel Working
-xxx
voltage
V
Z
(V);
I
Z
= 2 mA
Min
56
62
68
75
[1]
[2]
Maximum
differential
resistance
r
dif
(Ω)
I
Z
= 0.5
mA
375
400
400
400
Reverse
current
I
R
(μA)
Temperature Diode
capacitance
coefficient
[1]
C
d
(pF)
S
Z
(mV/K);
I
Z
= 5 mA
Max
63.8
71.6
79.8
88.6
Max
40
35
35
35
Non-
repetitive
peak reverse
current
[2]
I
ZSM
(A)
Max
0.3
0.3
0.25
0.20
Max
60.0
66.0
72.0
79.0
I
Z
= 2 mA Max
120
140
160
175
0.05
0.05
0.05
0.05
V
R
(V) Min
39.2
43.4
47.6
52.5
52.2
58.8
65.6
73.4
C
C
C
C
52.0
58.0
64.0
70.0
f = 1 MHz; V
R
= 0 V.
t
p
= 100 μs; T
amb
= 25 °C.
BZT52_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 16 March 2017
5 / 13
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