BAS521B
29 June 2018
High-voltage switching diode
Product data sheet
1. General description
High-voltage switching diode, in an ultra small SOD523 (SC-72) flat lead Surface-Mounted Device
(SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
High switching speed: t
rr
≤ 50 ns
Low leakage current: I
R
≤ 100 nA
High reverse voltage: V
R
≤ 200 V
Low capacitance: C
d
≤ 2 pF
Ultra small and leadless SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
•
•
High-speed switching
General-purpose switching
Voltage clamping
Reverse polarity protection
4. Quick reference data
Table 1. Quick reference data
Symbol
I
F
V
RRM
V
R
V
F
I
R
t
rr
[1]
Parameter
forward current
repetitive peak reverse
voltage
reverse voltage
forward voltage
reverse current
reverse recovery time
Conditions
T
j
= 25 °C
[1]
Min
-
-
-
Typ
-
-
-
-
-
-
Max
250
250
200
1.25
100
50
Unit
mA
V
V
V
nA
ns
I
F
= 200 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
V
R
= 200 V; pulsed; T
j
= 25 °C
I
F
= 30 mA; I
R
= 30 mA; R
L
= 100 Ω;
I
R(meas)
= 3 mA; T
j
= 25 °C
-
-
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Nexperia
BAS521B
High-voltage switching diode
5. Pinning information
Table 2. Pinning information
Pin
1
2
Symbol Description
K
A
cathode
anode
1
2
Simplified outline
Graphic symbol
K
A
aaa-028035
SOD523
6. Ordering information
Table 3. Ordering information
Type number
BAS521B
Package
Name
SOD523
Description
plastic, surface-mounted package; 2 leads; 1.2 mm x 0.8 mm x
0.6 mm body
Version
SOD523
7. Marking
Table 4. Marking codes
Type number
BAS521B
Marking code
S2
BAS521B
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
29 June 2018
2 / 11
Nexperia
BAS521B
High-voltage switching diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating Sytem (IEC 60134).
Symbol
V
RRM
V
R
I
F
I
FSM
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
non-repetitive peak
forward current
t
p
= 50 µs; T
j(init)
= 25 °C; square wave
t
p
= 100 µs; T
j(init)
= 25 °C; square wave
t
p
= 10 ms; T
j(init)
= 25 °C; square wave
I
FRM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Conditions
T
j
= 25 °C
Min
-
-
[1]
-
-
-
-
-
[1]
[2]
-
-
-
-55
-65
Max
250
200
250
9.4
7.2
2.4
625
250
380
150
150
150
Unit
V
V
mA
A
A
A
mA
mW
mW
°C
°C
°C
repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
t
p
≤ 1 ms; δ ≤ 0.25
T
amb
≤ 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for cathode 1cm .
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-a)
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
In free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
500
330
95
Unit
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for cathode 1cm .
Soldering point of cathode tab.
BAS521B
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
29 June 2018
3 / 11
Nexperia
BAS521B
High-voltage switching diode
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.50
0.25
0.10
0.05
10
0.02
0.01
0.75
0.33
0.20
aaa-028432
0
1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 1.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.50
0.25
0.10
0.05
10
0.02
0.01
0.33
0.20
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-028433
0
1
10
-5
10
-4
10
-3
10
-2
2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAS521B
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
29 June 2018
4 / 11
Nexperia
BAS521B
High-voltage switching diode
10. Characteristics
Table 7. Characteristics
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 100 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
I
F
= 200 mA; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
I
R
C
d
t
rr
reverse current
diode capacitance
reverse recovery time
V
R
= 200 V; pulsed; T
j
= 25 °C
V
R
= 200 V; pulsed; T
j
= 150 °C
V
R
= 0 V; f = 1 MHz; T
j
= 25 °C
I
F
= 30 mA; I
R
= 30 mA; R
L
= 100 Ω;
I
R(meas)
= 3 mA; T
j
= 25 °C
aaa-028434
Min
-
-
-
-
-
-
Typ
-
-
-
-
-
-
Max
1
1.25
100
100
2
50
Unit
V
V
nA
µA
pF
ns
0.5
I
F
(A)
0.4
1
I
F
(A)
10
-1
aaa-028435
0.3
10
-2
0.2
(1)
0.1
(2)
(3)
(4)
10
-3
(1) (2) (3) (4)
0
0
0.5
1.0
1.5
V
F
(V)
2.0
10
-4
0
0.25
0.50
0.75
1.00
1.25
1.50 1.75
V
F
(V)
(1) T
amb
= 150° C
(2) T
amb
= 85° C
(3) T
amb
= 25° C
(4) T
amb
= -40° C
Fig. 3.
Forward current as a function of forward
voltage; typical values
Fig. 4.
(1) T
j
= 150° C
(2) T
j
= 85° C
(3) T
j
= 25° C
(4) T
j
= -40° C
Forward current as a function of forward
voltage; typical values; (logarithmic scale)
BAS521B
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
29 June 2018
5 / 11
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