Advanced Data Sheet
GCMS040A120B3C1
GCMS040A120B3C1
1.2kV 40 mohm SiC MOSFET 6-Pack Module
Features：
Ultra Low Loss
High-Frequency Operation
Zero Reverse Recovery Current from SiC SBDs
Small Turn-off Tail Current from SiC MOSFETs
Normally-off Device Operation
Low Stray Inductance
Lead Free, Compliant with RoHS Requirement
Applications：
Industrial Motor Drivers
Solar Inverters
UPS and SMPS
Three-Phase PFC
Maximum Rated Values
(T
C
=25℃Unless otherwise specified)
Parameters
Drain ‐ Source Voltage
Continuous Drain Current (Q1‐Q4)
Gate ‐ Source Voltage
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature
Solder Temperature
Symbol Conditions
V
DS
I
D
V
GS
Specifications
1200
80
40
+25/‐10
Units
V
A
A
V
V
GS
=20V, T
C
= 25
0
C
V
GS
=20V, T
C
= 80
0
C
Limited by Tj_max
T
C
= 25
0
C
T
C
= 100
0
C
Max for 10 sec
I
DS
P
D
T
j
T
STG
T
L
150
220
TBD
‐40 ~ +150
‐40 ~ +125
260
A
W
W
0
0
0
C
C
C
Page 1 of 6
Rev. 1.0
4/13/2015
Advanced Data Sheet
GCMS040A120B3C1
Electrical Characteristics of MOSFETs
(T
j
=25
o
C unless otherwise specified)
Parameters
OFF
Zero Gate Voltage Drain Current
Gate‐Source Leakage Current
ON
Gate‐Source Threshold Voltage
On State Resistance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Module Stray Inductance
Module Lead Resistance
SWITCHING
Turn‐On Delay Time
Rise Time
Turn‐Off Delay Time
Fall Time
Turn‐On Switching Energy Loss
Turn‐Off Switching Energy Loss
Turn‐On Delay Time
Rise Time
Turn‐Off Delay Time
Fall Time
Turn‐On Switching Energy Loss
Turn‐Off Switching Energy Loss
Total Gate Charge
Gate‐Source Charge
Gate‐Drain Charge
Short Circuit Withstanding Time
t
d(on)
t
r
t
d(off)
t
f
E
ON
E
OFF
t
d(on)
t
r
t
d(off)
t
f
E
ON
E
OFF
Q
G
Q
GS
Q
GD
t
sc
V
CC
= 800V, V
GS
= 20V
T
J
=125
0
C
V
DD
= 800V, I
D
=40A
V
GS
= ‐5/20V
Symbol
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
Conditions
V
DS
= 1200V, V
GS
= 0V
V
DS
= 0V, V
GS
= 20V
V
DS
= 10V, I
D
= 1mA
V
GS
= 20V, I
D
= 40A, T
j
= 25
0
C
V
GS
= 20V, I
D
= 40A, T
j
= 150 C
0
Min
‐‐
‐‐
1.9
--
--
‐‐
‐‐
‐‐
‐‐
‐‐
Typ
1
‐‐
2.2
40
84
1893
150
10
TBD
TBD
Max
100
±250
‐‐
--
--
‐‐
‐‐
‐‐
‐‐
‐‐
Units
uA
nA
V
m
m
pF
pF
pF
nH
m
C
ISS
C
OSS
C
RSS
L
R
mod
V
DS
= 800V, V
GE
= 0V, f = 1 MHz
‐‐
V
DD
= 800V, I
D
=40A
R
G
= 2.5Ω, V
GS
= ‐5/20V
Inductive Load, T
J
=25
0
C
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
V
DD
= 800V, I
D
=40A
R
G
= 2.5Ω, V
GS
=‐5/20V
Inductive Load, T
J
=125
0
C
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
10
15
35
32
26
1.5
0.7
TBD
TBD
TBD
TBD
TBD
TBD
115
28
37
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
nC
nC
nC
s
Page 2 of 6
Rev. 1.0
4/13/2015
Advanced Data Sheet
GCMS040A120B3C1
SiC Freewheeling Diode Characteristics
Parameters
Symbol
Conditions
Min
Typ
40
120
V
GS
=‐5V, I
SD
=40A
V
GS
=‐5V, I
SD
=40A, T
j
=25
o
C
1.7
203
Max
Units
A
A
V
nC
Max continuous drain‐source diode I
S
forward current
Max pulsed drain‐source diode I
SM
forward current
Diode forward voltage
V
SD
Reverse recovery charge
Q
C
Thermal Characteristics
Parameters
Symbol
Conditions
T
C
=80
o
C
T
C
=80
o
C
Min
Typ
0.34
0.37
Max
Units
℃/W
℃/W
Thermal Resistance Junction to Case: R
thJCM
MOSFET
Thermal Resistance Junction to Case: R
thJCD
SBD
Internal NTC-Thermistor Characteristic
Symbol
R
25
△
R/R
Description
T
C
=25℃
T
C
=100℃，R
100
=481Ω
T
C
=25℃
R
2
=R
25
exp[B
25/50
(1/T
2
-1/(298.15K))]
R
2
=R
25
exp[B
25/80
(1/T
2
-1/(298.15K))]
Min
Typ
5
Max
Unit
kΩ
±5
50
3380
3440
%
mW
K
K
P
25
B
25/50
B
25/80
Module
Symbol
V
iso
T
JOP
T
stg
R
θCS
T
G
Description
Isolation Voltage(All Terminals Shorted)
f = 50Hz, 1minute
-40
-40
0.05
1.0
40
1.5
Min
Typ
Max
2500
+150
+125
Unit
V
℃
℃
℃/W
N·m
g
Maximum Operating Junction Temperature Range
Storage Temperature
Case-To-Sink (Conductive Grease Applied)
Mounting Screw:M4
Weight
Page 3 of 6
Rev. 1.0
4/13/2015
Advanced Data Sheet
GCMS040A120B3C1
Internal Circuit:
Page 4 of 6
Rev. 1.0
4/13/2015
Advanced Data Sheet
GCMS040A120B3C1
Package Outline (Unit: mm):
GCMS040A120B3C1
Page 5 of 6
Rev. 1.0
4/13/2015
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