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PNP - General Purpose Transistor Die
0.6 Amp, 60 Volt
MECHANICAL SPECIFICATIONS:
Die Size
Die Thickness
Base Bonding Pad Size
Emitter Bonding Pad Size
Top Side Metalization
Back Side Metalization
Scribe Alley Width
Wafer Diameter
Gross Die Per Wafer
19.3 x 19.3 MILS
5.9 MILS
3.5 x 4.3 MILS
3.5 x 4.5 MILS
Al – 13,000Å
Au – 9,000Å
1.75 MILS
5 INCHES
45,900
UNITS
V
V
V
mA
°C
UNITS
nA
nA
V
V
V
0.4
1.6
1.3
2.6
75
100
100
100
50
200
8.0
30
45
100
MHz
pF
pF
ns
ns
300
V
V
V
V
CP591X-2N2907A
The CP591X-2N2907A is a silicon PNP transistor designed for general purpose applications.
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
ELECTRICAL
SYMBOL
ICBO
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
fT
Cob
Cib
ton
toff
CHARACTERISTICS:
(TA=25°C)
TEST CONDITIONS
VCB=50V
VCE=30V, VEB=0.5V
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=20V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=2.0V, IC=0, f=1.0MHz
VCC=30V, IC=150mA, IB1=15mA
SYMBOL
VCBO
VCEO
VEBO
IC
TJ, Tstg
MIN
60
60
5.0
600
-65 to +150
MAX
10
50
60
60
5.0
VCC=6.0V, IC=150mA, IB1=IB2=15mA
R2 (25-April 2017)
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nd
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REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
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when ordering (example: 2N2222A PBFREE).
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