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ZVN0117TA

Description
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
CategoryDiscrete semiconductor    The transistor   
File Size33KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

ZVN0117TA Overview

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ZVN0117TA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage170 V
Maximum drain current (Abs) (ID)0.16 A
Maximum drain current (ID)0.16 A
Maximum drain-source on-resistance23 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.7 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ZVN0117TA
ISSUE 1 – APRIL 94
FEATURES
* 170 Volt BV
DS
APPLICATIONS
* Telephone handsets
D
G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
V
DS
SYMBOL
E-Line
TO92 Compatible
VALUE
170
160
2
±
20
UNIT
V
mA
A
V
700
-55 to +150
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source
On-State Resistance (1)
BV
DSS
I
GSS
I
DSS
I
D(on)
R
DS(on)
100
23
23
170
100
10
50
V
nA
µ
A
µ
A
I
D
=10
µ
A, V
GS
=0V
V
GS
=
±
15V, V
DS
=0V
V
DS
=170 V, V
GS
=0
V
DS
=140 V, V
GS
=0V,
T=50°C
(2)
mA
V
DS
=3V, V
GS
=3.3V
V
GS
=3.3V,I
D
=100mA
V
GS
=3V,I
D
=30mA
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
2%
PAGE NO

ZVN0117TA Related Products

ZVN0117TA
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Is it Rohs certified? incompatible
Maker Zetex Semiconductors
package instruction CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknow
ECCN code EAR99
Configuration SINGLE
Minimum drain-source breakdown voltage 170 V
Maximum drain current (Abs) (ID) 0.16 A
Maximum drain current (ID) 0.16 A
Maximum drain-source on-resistance 23 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-92
JESD-30 code O-PBCY-W3
JESD-609 code e0
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Maximum operating temperature 200 °C
Package body material PLASTIC/EPOXY
Package shape ROUND
Package form CYLINDRICAL
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 0.7 W
Certification status Not Qualified
surface mount NO
Terminal surface Tin/Lead (Sn/Pb)
Terminal form WIRE
Terminal location BOTTOM
transistor applications SWITCHING
Transistor component materials SILICON
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