DMC1016UPD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
Device
V
(BR)DSS
12V
R
DS(ON)
17mΩ @ V
GS
= 4.5V
25mΩ @ V
GS
= 2.5V
20mΩ @ V
GS
= -4.5V
25mΩ @ V
GS
= -2.5V
I
D
T
A
= +25°
C
9.5A
7.8A
-8.7A
-7.8A
Features and Benefits
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low R
DS(ON)
– Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate for Q2 P-Channel
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Q1
Q2
-20V
Description and Applications
This new generation Complementary Pair Enhancement Mode
MOSFET has been designed to minimize R
DS(ON)
and yet maintain
superior switching performance. This device is ideal for use in
Notebook battery power management and Loadswitch.
Notebook Battery Power Management
DC-DC Converters
Loadswitch
Mechanical Data
Case: PowerDI5060-8 (Type C)
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – 100% Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
e3
Terminal Connections: See Diagram Below
Weight: 0.097 grams (Approximate)
D1
D2
S1
G1
D1
D1
D2
G1
S1
Pin1
Top View
Bottom View
G2
S2
G2
Gate Protection
Diode
D2
S2
Top View
Pin Configuration
Q1 N-Channel MOSFET
Q2 P-Channel MOSFET
Ordering Information
(Note 4)
Part Number
DMC1016UPD-13
Notes:
Case
PowerDI5060-8 (Type C)
Packaging
2500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D1
D1
D2
D2
C1016UD
YY WW
= Manufacturer’s Marking
C1016UD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 - 53)
S1
G1
S2
G2
1 of 10
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March 2016
© Diodes Incorporated
POWERDI is a registered trademark of Diodes Incorporated.
DMC1016UPD
Document number: DS37799 Rev. 2 - 2
DMC1016UPD
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AS
E
AS
Q1 Value
12
±8
9.5
7.6
13.0
10.4
2.6
65
20
25
Q2 Value
-20
±8
-8.7
-7.0
-12.0
-9.6
Units
V
V
A
A
A
A
A
mJ
Continuous Drain Current (Note 5) V
GS
= 4.5V
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
T
A
= +25°
C
T
A
= +70°
C
Steady state
t<10s
Symbol
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
2.3
1.5
55
29
6.2
-55 to +150
Units
W
°
C/W
°
C
Electrical Characteristics Q1 N-Channel
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
12
0.6
—
—
Typ
0.8
9.0
11
0.7
1454
336
311
1.6
18
32
3.1
4.3
6.6
9.6
42.5
22.5
16.6
2.8
Max
1
100
1.5
17
25
1.2
—
—
ns
V
DD
= 6V, R
L
= 6Ω
V
GS
= 4.5V, R
G
= 6Ω, I
D
= 1A
I
F
= 11.8A, di/dt = 100A/μs
I
F
= 11.8A, di/dt = 100A/μs
Ω
pF
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 12V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 11.8A
V
GS
= 2.5V, I
D
= 9.8A
V
GS
= 0V, I
S
= 2.9A
V
DS
= 6V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
nC
V
DS
= 6V, I
D
= 11.8A
ns
nC
POWERDI is a registered trademark of Diodes Incorporated.
DMC1016UPD
Document number: DS37799 Rev. 2 - 2
2 of 10
www.diodes.com
March 2016
© Diodes Incorporated
DMC1016UPD
Electrical Characteristics Q2 P-Channel
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
V
GS(TH)
-20
—
—
-0.35
—
—
—
—
—
—
—
—
—
—
—
—
—
-0.6
14
17
22
26
-0.8
3103
351
239
12
32
56
4.5
6.1
8.1
16.0
150
82
20.6
8.3
—
-1
±10
-1.0
20
25
40
80
-1.2
—
—
—
—
—
ns
V
DD
= -6V, R
L
= 6Ω
V
GS
= -4.5V, R
G
= 6Ω, I
D
= -1A
I
F
= -8.9A, di/dt = -100A/μs
I
F
= -8.9A, di/dt = -100A/μs
pF
Ω
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
µA
A
V
V
GS
= 0V, I
D
= -250μA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -4.5V, I
D
= -7.0A
V
GS
= -2.5V, I
D
= -5.0A
V
GS
= -1.8V, I
D
= -3.0A
V
GS
= -1.5V, I
D
= -1.0A
V
GS
= 0V, I
S
= -1.0A
Symbol
Min
Typ
Max
Unit
Test Condition
Static Drain-Source On-Resistance
R
DS(ON)
mΩ
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
V
nC
V
DS
= -6V, I
D
= -8.9A
ns
nC
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°
C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMC1016UPD
Document number: DS37799 Rev. 2 - 2
3 of 10
www.diodes.com
March 2016
© Diodes Incorporated
DMC1016UPD
Typical Characteristics - N-CHANNEL
50.0
45.0
40.0
I
D
, DRAIN CURRENT (A)
35.0
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
= 1.2V
0.0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
0
0
0.5
1
1.5
2
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2.5
V
GS
= 1.5V
V
GS
= 4.5V
V
GS
= 8V
V
GS
= 2.5V
V
GS
= 3.0V
V
GS
= 3.5V
I
D
, DRAIN CURRENT (A)
V
GS
= 4.0V
V
GS
= 2.0V
30
V
DS
= 5V
25
20
15
10
T
J
= 125
o
C
5
T
J
= 150
o
C
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.012
V
GS
= 2.5V
0.009
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.015
0.1
0.08
I
D
= 11..8A
0.06
0.006
0.04
0.003
0.02
I
D
= 9.8A
0
1
2
3
4
5
6
7
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
8
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
0
0
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Ω)
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
0
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Temperature
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5
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 150
o
C
T
J
= 125
o
C
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
V
GS
= 4.5V
2.5
2
1.5
V
GS
= 2.5V, I
D
= 10A
1
V
GS
= 4.5V, I
D
= 15A
0.5
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
March 2016
© Diodes Incorporated
POWERDI is a registered trademark of Diodes Incorporated.
DMC1016UPD
Document number: DS37799 Rev. 2 - 2
DMC1016UPD
Typical Characteristics - N-CHANNEL
(Cont.)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.02
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.5
0.015
V
GS
= 2.5V, I
D
= 10A
1
0.01
V
GS
= 4.5V, I
D
= 15A
0.005
I
D
= 1mA
0.5
I
D
= 250µA
0
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
f=1MHz
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
1000
C
oss
C
rss
100
30
V
GS
= 0V
25
I
S
, SOURCE CURRENT (A)
10000
20
15
10
T
J
= 150
o
C
5
T
J
= 125
o
C
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
10
0
2
4
6
8
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
R
DS(ON)
Limited
12
8
100
I
D
, DRAIN CURRENT (A)
6
10
DC
1
P
W
=10s
P
W
=1s
P
W
=100ms
0.1
P
W
=10ms
T
J(Max)
=150℃
P
W
=1ms
T
A
=25℃
Single Pulse
P
W
=100µs
DUT on 1*MRP Board
V
GS
=4.5V
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
V
GS
(V)
4
V
DS
= 6V, I
D
= 11.8A
2
0
0
5
10
20
25
30
Q
g
(nC)
Figure 11. Gate Charge
15
35
40
0.01
POWERDI is a registered trademark of Diodes Incorporated.
DMC1016UPD
Document number: DS37799 Rev. 2 - 2
5 of 10
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March 2016
© Diodes Incorporated
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