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2SK01980RL

Description
JFET N-CH 20MA 150MW MINI-3
Categorysemiconductor    Discrete semiconductor   
File Size209KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

2SK01980RL Overview

JFET N-CH 20MA 150MW MINI-3

2SK01980RL Parametric

Parameter NameAttribute value
FET typeN channel
Drain-source voltage (Vdss)30V
Current at different Vds (Vgs=0) - Drain (Idss)500µA @ 10V
Drain current (Id) - maximum20mA
Voltage at different Id - cutoff (VGS off)100mV @ 10µA
Input capacitance (Ciss) at different Vds (maximum value)14pF @ 10V
Power - Max150mW
Operating temperature150°C(TJ)
Installation typesurface mount
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingMini 3-G1
This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon Junction FETs (Small Signal)
2SK0198
(2SK198)
Silicon N-channel junction FET
For low-frequency amplification
Features
Package
Code
Mini3-G1
Pin Name
1: Source
2: Drain
3: Gate
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
DS
I
D
Drain-sourse voltage
Drain-gate voltage (Source open)
Drain current
Gate current
V
DGO
I
G
Power dissipation
P
D
Channel temperature
Storage temperature
T
ch
T
stg
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
I
DSS
tin
Drain-source current
*
on
Gate-source cutoff current
I
GSS
isc
Gate-source cutoff voltage
V
GSC
Forward transfer admittance
/D
Y
fs
C
iss
Ma
int
en
Short-circuit forward transfer capacitance
(Common source)
Reverse transfer capacitance
(Common source)
Noise voltage
C
rss
NV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
I
DSS
(mA)
P
0.5 to 3.0
Q
2.0 to 6.0
R
4.0 to 12.0
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Rating
30
30
20
10
Unit
V
V
M
ain
Di
sc te
on na
tin nc
ue e/
d
High mutual conductance g
m
Low-noise characteristics
Mini type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing
mA
mA
°C
150
150
mW
°C
−55
to
+150
Conditions
Min
0.5
Marking Symbol: 1O
Typ
Max
12
Unit
mA
nA
V
ue
V
DS
=
10 V, V
GS
=
0
V
GS
= −30
V, V
DS
=
0
100
1.5
V
DS
=
10 V, I
D
=
10
µA
0.1
4
4
V
DS
=
10 V, I
D
=
0.5 mA, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
mS
pF
an
ce
14
3.5
60
pF
V
DS
=
30 V, I
D
=
1 mA, G
V
=
80 dB
R
g
=
100 kΩ, Function
=
FLAT
mV
Note) The part number in the parenthesis shows conventional part number.
Publication date: May 2008
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