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DF5A5.6JE,LM

Description
TVS DIODE 2.5V ESV
CategoryCircuit protection   
File Size169KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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DF5A5.6JE,LM Overview

TVS DIODE 2.5V ESV

DF5A5.6JE,LM Parametric

Parameter NameAttribute value
typeZina
One way channel4
Voltage - Reverse OFF (Typical)2.5V
Voltage - Breakdown (minimum)5.3V
电压 - 箝位(最大值)@ Ipp-
Current - Peak Pulse (10/1000µs)-
Power - Peak Pulse-
Power line protectionnone
applicationUniversal
Capacitance at different frequencies65pF @ 1MHz
Operating temperature-
Installation typesurface mount
Package/casingSOT-553
Supplier device packagingESV
DF5A5.6JE
TOSHIBA Diodes for Protecting against ESD
DF5A5.6JE
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
100
150
−55
to 150
Unit
mW
°C
°C
1.CATHODE1
2.ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
reliability significantly even if the operating conditions (i.e.
TOSHIBA
1-2W1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.003 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
= 5 mA
I
Z
= 5 mA
V
R
=2. 5 V
V
R
= 0, f = 1 MHz
Test Condition
Min
5.3
Typ.
5.6
65
Max
6.0
40
1.0
Unit
V
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
30 kV
Criterion: No damage to device elements
Start of commercial production
1
2002-03
2014-03-01

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