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CUS551V30,H3F

Description
DIODE SCHOTTKY 30V 500MA USC
CategoryDiscrete semiconductor    diode   
File Size124KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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CUS551V30,H3F Overview

DIODE SCHOTTKY 30V 500MA USC

CUS551V30,H3F Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionR-PDSO-G2
Reach Compliance Codeunknown
Samacsys DescriptionSchottky Diodes & Rectifiers SM Sig Schotky Diode 30 VR 0.5A 1 Circuit
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.47 V
JESD-30 codeR-PDSO-G2
Maximum non-repetitive peak forward current5 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage30 V
Maximum reverse current100 µA
Reverse test voltage20 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
CUS551V30
Schottky Barrier Diode
Silicon Epitaxial
CUS551V30
1. Applications
High-Speed Switching
2. Features
(1)
(2)
Low forward voltage: V
F(3)
= 0.38 V (typ.)
General-purpose USC package, equivalent to SOD-323 and SC-76 packages.
3. Packaging and Internal Circuit
1: Cathode
2: Anode
USC
25
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Reverse voltage
Average rectified current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
V
R
I
O
I
FSM
T
j
T
stg
Note
(Note 1)
(Note 2)
Rating
30
500
5
125
-55 to 125
Unit
V
mA
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass-epoxy circuit board of 20 mm
×
20 mm, pad dimensions of 4 mm
×
4 mm
Note 2: Measured with a 10 ms pulse.
Note:
Start of commercial production
1
2011-07
2014-04-14
Rev.5.0

CUS551V30,H3F Related Products

CUS551V30,H3F CUS551V30,H3F(T
Description DIODE SCHOTTKY 30V 500MA USC Rectifier Diode
Maker Toshiba Semiconductor Toshiba Semiconductor
package instruction R-PDSO-G2 R-PDSO-G2
Reach Compliance Code unknown unknow
application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.47 V 0.47 V
JESD-30 code R-PDSO-G2 R-PDSO-G2
Maximum non-repetitive peak forward current 5 A 5 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 125 °C 125 °C
Maximum output current 0.5 A 0.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 30 V 30 V
Maximum reverse current 100 µA 100 µA
Reverse test voltage 20 V 20 V
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL

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