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PHC2300,118

Description
MOSFET N/P-CH 300V 8SOIC
CategoryDiscrete semiconductor    The transistor   
File Size735KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

PHC2300,118 Overview

MOSFET N/P-CH 300V 8SOIC

PHC2300,118 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Manufacturer packaging codeSOT96-1
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys Confidence3
Samacsys StatusReleased
Samacsys PartID236020
Samacsys Pin Count8
Samacsys Part CategoryIntegrated Circuit
Samacsys Package CategorySmall Outline Packages
Samacsys Footprint NameNXP SO8
Samacsys Released Date2016-04-07 04:11:26
Is SamacsysN
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage300 V
Maximum drain current (ID)0.34 A
Maximum drain-source on-resistance6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
JESD-609 codee4
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PHC2300
Complementary enhancement mode MOS transistors
Rev. 05 — 24 February 2011
Product data sheet
1. Product profile
1.1 General description
One N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package. This product is designed and qualified for use in computing,
communications, consumer and industrial applications only.
1.2 Features and benefits
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
High-speed line drivers
Line transformer drivers
Relay drivers
Universal line interface in telephone
sets
1.4 Quick reference data
Table 1.
Symbol
V
DS
Quick reference data
Parameter
drain-source
voltage
Conditions
T
j
25 °C; T
j
150 °C;
N-channel
T
j
25 °C; T
j
150 °C;
P-channel
I
D
P
tot
drain current
total power
dissipation
drain-source
on-state
resistance
T
sp
= 80 °C; N-channel
T
sp
= 80 °C; P-channel
T
sp
= 80 °C
[1]
[1]
[2]
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max Unit
300
V
-300 V
340
1.6
mA
W
-235 mA
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 170 mA;
T
j
= 25 °C; N-channel
V
GS
= -10 V; I
D
= -115 mA;
T
j
= 25 °C; P-channel
-
-
-
-
6
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