This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3707
Silicon NPN epitaxial planar type
For UHF amplification
■
Features
0.40
+0.10
–0.05
3
Unit: mm
0.16
+0.10
–0.06
M
Di ain
sc te
on na
tin nc
ue e/
d
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
P
C
T
j
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Collector current
2
V
10
50
mA
°C
Collector power dissipation
Junction temperature
Storage temperature
mW
°C
150
Marking Symbol: 2X
T
stg
−55
to
+150
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
I
CBO
I
EBO
h
FE
f
T
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency
Conditions
Min
Typ
0 to 0.1
Collector-emitter voltage (Base open)
na
nc
Collector output capacitance
(Common base, input open circuited)
Forward transfer gain
ain
te
Maximum unilateral power gain
Noise figure
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Handle the product with care because this is sensitive to the electrostatic breakdown by its structure
Publication date: February 2003
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1
2
Rating
10
7
Unit
V
10˚
1.1
+0.2
–0.1
(0.65)
•
Possible with the small current and low voltage
•
High transition frequency f
T
•
Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
packing
1.50
+0.25
–0.05
2.8
+0.2
–0.3
V
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Max
1
1
Unit
µA
µA
V
CB
=
10 V, I
E
=
0
V
EB
=
1.5 V, I
C
=
0
sc
on
V
CE
=
1 V, I
C
=
1 mA
50
150
V
CE
=
1 V, I
C
=
1 mA, f
=
0.8 GHz
V
CB
=
1 V, I
E
=
0, f
=
1 MHz
4
GHz
pF
Di
e/
C
ob
0.4
S
21e
2
G
UM
NF
V
CE
=
1 V, I
C
=
1 mA, f
=
0.8 GHz
V
CE
=
1 V, I
C
=
1 mA, f
=
0.8 GHz
V
CE
=
1 V, I
C
=
1 mA, f
=
0.8 GHz
6.0
15
dB
dB
3.5
dB
M
0.4
±0.2
5˚
SJC00135BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3707
P
C
T
a
80
I
C
V
CE
6
I
B
=
50
µA
5
T
a
=
25°C
45
µA
35
µA
30
µA
25
µA
20
µA
15
µA
10
µA
I
C
V
BE
60
V
CE
=
1 V
Collector power dissipation P
C
(mW)
50
60
Collector current I
C
(mA)
Collector current I
C
(mA)
40
µA
4
40
25°C
30
T
a
=
75°C
−25°C
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
10
1
T
a
=
75°C
25°C
−25°C
0.1
0.01
0.1
1
10
100
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
1.2
Maximum unilateral power gain G
UM
(dB)
na
nc
1.0
I
E
=
0
f
=
1 MHz
T
a
=
25°C
0.8
16
Noise figure NF (dB)
M
0.6
0.4
0.2
0
0.1
1
10
100
Collector-base voltage V
CB
(V)
2
tin
ue
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i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
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ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
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/e a
n/ tio
.
n.
0
0
0.4
0.8
1.2
1.6
2.0
2.4
M
Di ain
sc te
on na
tin nc
ue e/
d
40
3
2
20
20
1
5
µA
10
0
0
0.4
0.8
1.2
1.6
2.0
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
h
FE
I
C
f
T
I
C
240
V
CE
=
1 V
12
Forward current transfer ratio h
FE
Transition frequency f
T
(GHz)
200
10
V
CE
=
1 V
f
=
800 MHz
T
a
=
25°C
160
8
T
a
=
75°C
120
6
25°C
80
4
−25°C
40
2
0
0.1
1
10
100
0
0.1
1
10
100
Collector current I
C
(mA)
Collector current I
C
(mA)
sc
on
G
UM
I
C
NF
I
C
Di
24
20
V
CE
=
1 V
f
=
800 MHz
T
a
=
25°C
6
5
V
CE
=
1 V
(R
g
=
50
Ω)
f
=
800 MHz
T
a
=
25°C
te
e/
4
ain
12
3
8
2
4
1
0
0.1
1
10
100
0
0.1
1
10
100
Collector current I
C
(mA)
Collector current I
C
(mA)
SJC00135BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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ue
Pl
pla d in
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pla m d de
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se g U tin tin t e fou
m R ue ue yp typ r P
ico L d d e
e
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n. ab typ ty
du
pa ou e pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
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/e a
n/ tio
.
n.
M
ain
te
na
nc
M
Di ain
sc te
on na
tin nc
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e/
Di
sc
on
Embedded System
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