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2SC4915-O,LF

Description
TRANS RF NPN 30V 550MHZ SSM
CategoryDiscrete semiconductor    The transistor   
File Size304KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC4915-O,LF Overview

TRANS RF NPN 30V 550MHZ SSM

2SC4915-O,LF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
Samacsys DescriptionBipolar Transistors - BJT Radio-Frequency Bipolar Transistor
Base Number Matches1
2SC4915
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4915
High Frequency Amplifier Applications
FM, RF, MIX, If Amplifier Applications
Small reverse transfer capacitance: C
re
= 0.55 pF (typ.)
Low noise figure: NF = 2.3dB (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
40
30
4
20
4
100
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-2H1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Weight: 2.4 mg (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
Symbol
I
CBO
I
EBO
h
FE
(Note)
C
re
f
T
C
c
½rbb’
NF
G
pe
Test Condition
V
CB
=
40 V, I
E
=
0 A
V
EB
=
4 V, I
C
=
0 A
V
CE
=
6 V, I
C
=
1 mA
V
CB
=
6 V, f
=
1 MHz
V
CE
=
6 V, I
C
=
1 mA
V
CE
=
6 V, I
E
= −1
mA, f
=
30 MHz
V
CC
=
6 V, I
E
= −1
mA,
f
=
100 MHz, Figure 1
Min
40
260
17
Typ.
0.55
550
2.3
23
Max
0.1
0.5
200
20
5.0
pF
MHz
ps
dB
dB
Unit
μA
μA
Note: h
FE
classification R: 40 to 80, O: 70 to 140, Y: 100 to 200
Start of commercial production
1992-02
1
2014-03-01

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2SC4915-O,LF 2SC4915-O,LF(B 2SC4915-Y,LF(B 2SC4915-Y,LF
Description TRANS RF NPN 30V 550MHZ SSM RF Small Signal Bipolar Transistor RF Small Signal Bipolar Transistor TRANS RF NPN 30V 550MHZ SSM
Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor -
Reach Compliance Code unknown unknown unknown -
Base Number Matches 1 1 1 -
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