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KSC2328A — NPN Epitaxial Silicon Transistor
October 2014
KSC2328A
NPN Epitaxial Silicon Transistor
Features
• Audio Power Amplifier Application
• Complement to KSA928A
• 3 W Output Application
1
TO-92L
1. Emitter 2. Collector 3. Base
Ordering Information
Part Number
KSC2328AOTA
KSC2328AYBU
KSC2328AYTA
Top Mark
C2328A O-
C2328A Y-
C2328A Y-
Package
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Ammo
Bulk
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Parameter
Value
30
30
5
2
150
-55 to +150
Unit
V
V
V
A
°C
°C
© 2002 Fairchild Semiconductor Corporation
KSC2328A Rev. 1.1.0
www.fairchildsemi.com
KSC2328A — NPN Epitaxial Silicon Transistor
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Power Dissipation
Derate Above 25°C
Parameter
Value
1000
8.0
125
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction-to-Ambient
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
BE
(on)
V
CE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Output Capacitance
Conditions
I
C
= 100
μA,
I
E
= 0
I
E
= 1 mA, I
C
= 0
V
CB
= 30 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 2 V, I
C
= 500 mA
V
CE
= 2 V, I
C
= 500 mA
I
C
= 1.5 A, I
B
= 0.03 A
V
CE
= 2 V, I
C
= 500 mA
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Min.
30
30
5
Typ.
Max.
Unit
V
V
V
Collector-Emitter Breakdown Voltage I
C
= 10 mA, I
B
= 0
100
100
100
320
1.0
2.0
120
30
nA
nA
V
V
MHz
pF
h
FE
Classification
Classification
h
FE
O
100 ~ 200
Y
160 ~ 320
© 2002 Fairchild Semiconductor Corporation
KSC2328A Rev. 1.1.0
www.fairchildsemi.com
2
KSC2328A — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
1400
I
B
= 7mA
I
B
= 6mA
I
B
= 5mA
I
B
= 4mA
I
B
= 3mA
I
B
= 2mA
I
B
= 1mA
10
V
CE
= 2V
I
C
[mA], COLLECTOR CURRENT
1200
1000
h
FE
, DC CURRENT GAIN
1000
800
600
100
400
200
0
0
2
4
6
8
10
12
14
16
18
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC Current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1400
V
CE
= 2V
1
I
C
[mA], COLLECTOR CURRENT
I
C
= 50 I
B
o
Ta = 25 C
1200
1000
800
600
0.1
400
200
0.01
1
10
100
1000
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
1.4
I
C
(MAX) PULSE
1.2
I
C
[A], COLLECTOR CURRENT
I
C
(MAX)
1
1s
T
C
DC
=2
5
O
PE
RA
C
TI
o
P
C
[W], POWER DISSIPATION
100
s
1m
1.0
0.8
NG
0.6
0.1
0.4
V
CEO
(MAX)
0.01
0.1
0.2
1
10
0.0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
a
[ C], AMIBIENT TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
© 2002 Fairchild Semiconductor Corporation
KSC2328A Rev. 1.1.0
www.fairchildsemi.com
3
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