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DF2B6M4SL,L3F

Description
TVS DIODE 5.5V 25V SL2
CategoryDiscrete semiconductor    diode   
File Size351KB,9 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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DF2B6M4SL,L3F Overview

TVS DIODE 5.5V 25V SL2

DF2B6M4SL,L3F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionR-PDSO-N2
Reach Compliance Codeunknown
Samacsys DescriptionESD Suppressors / TVS Diodes ESD Protection Diode
Other featuresLOW CAPACITANCE
Maximum breakdown voltage8 V
Minimum breakdown voltage5.6 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-N2
Maximum non-repetitive peak reverse power dissipation30 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
GuidelineIEC-61000-4-2, 4-5
Maximum repetitive peak reverse voltage5.5 V
surface mountYES
technologyAVALANCHE
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DF2B6M4SL
ESD Protection Diodes
Silicon Epitaxial Planar
DF2B6M4SL
1. General
The DF2B6M4SL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device
interfaces and other applications to protect against static electricity and noise.
Utilizing snapback characteristics, the DF2B6M4SL provides low dynamic resistance and superior protective
performance.
Furthermore, it is optimum the high speed signal application for the low capacitance performance. The
DF2B6M4SL is housed in an ultra-compact package (0.32
×
0.62 mm) to meet applications that require a small
footprint.
2. Applications
Mobile Equipment
Smartphones
Tablets
Notebook PCs
Desktop PCs
Note:
This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
3. Features
(1)
(2)
(3)
(4)
(5)
Suitable for use with a 5.0 V signal line. (V
RWM
5.5 V)
Protects devices with its high ESD performance.
(V
ESD
=
±20
kV (Contact / Air) @IEC61000-4-2)
Low dynamic resistance protects semiconductor devices from static electricity and noise.
(R
DYN
= 0.5
(typ.))
Snapback characteristics realizing low clamping voltage protects semiconductor devices.
(V
C
= 10 V@I
PP
= 2 A (typ.))
Compact package is suitable for use in high density board layouts such as in mobile devices.
(0.32
×
0.62 mm size (Toshiba package name: SL2))
4. Packaging
SL2
Start of commercial production
©2015-2017
Toshiba Electronic Devices & Storage Corporation
1
2015-10
2017-12-21
Rev.4.0
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