DF2S6.8UFS
ESD Protection Diodes
Silicon Epitaxial Planar
DF2S6.8UFS
1. Applications
•
ESD Protection
This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
Note:
2. Packaging and Internal Circuit
1: Cathode
2: Anode
SOD-923
1: Cathode
2: Anode
fSC
The SOD-923 package is recommended.
Package
SOD-923
fSC
Product name
DF2S6.8UFS,L3M (Note 1)
DF2S6.8UFS,L3J , DF2S6.8UFS,L3F
Note 1: The product name of the devices housed in the SOD-923 package are suffixed with
the "M".
Start of commercial production
1
2007-01
2014-07-23
Rev.5.0
DF2S6.8UFS
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
25
Characteristics
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
Junction temperature
Storage temperature
Symbol
V
ESD
T
j
T
stg
Rating
±8
150
-55 to 150
Unit
kV
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
4. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
25
V
RWM
: Working peak reverse
voltage
V
BR
: Reverse breakdown voltage
V
R
: Reverse voltage
I
BR
: Reverse breakdown current
I
R
: Reverse current
V
C
: Clamp voltage
I
PP
: Peak pulse current
R
DYN
: Dynamic resistance
I
F
: Forward current
V
F
: Forward voltage
Fig. 4.1 Definitions of Electrical Characteristics
Characteristics
Working peak reverse voltage
Reverse breakdown voltage
Reverse current
Dynamic resistance
Total capacitance
Working peak reverse voltage
Reverse breakdown voltage
Reverse current
Symbol
V
RWM
(1)
V
BR
(1)
I
R
(1)
R
DYN
C
t
V
RWM
(2)
V
BR
(2)
I
R
(2)
Note
Test Condition
Min
5.3
Typ.
6.8
0.3
1.6
25
Max
5
0.1
19
0.5
Unit
V
V
µA
Ω
pF
V
V
µA
I
BR
= 1 mA
V
RWM
= 5 V
(Note 1)
V
R
= 0 V, f = 1 MHz
I
BR
= 1 mA
V
RWM
= 19 V
22
Note 1: TLP parameter: Z0 = 50
Ω,
tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,
extraction of dynamic resistance using a least-squares fit of TLP characteristics at I
PP
between 3 A to 8 A.
2
2014-07-23
Rev.5.0
DF2S6.8UFS
5. Guaranteed ESD Protection (Note)
Test Condition
IEC61000-4-2 (Contact discharge)
ESD Protection
±8
kV
Note:
Criterion: No damage to devices.
6. Marking
Fig. 6.1 Marking
7. Land Pattern Dimensions (for reference only)
Fig. 7.1 SOD-923 (unit: mm)
Fig. 7.2 fSC (unit: mm)
3
2014-07-23
Rev.5.0
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