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2SK3019-TP

Description
N-CHANNEL MOSFET, SOT-523 PACKAG
Categorysemiconductor    Discrete semiconductor   
File Size562KB,4 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
Download Datasheet Parametric View All

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2SK3019-TP Overview

N-CHANNEL MOSFET, SOT-523 PACKAG

2SK3019-TP Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)30V
Current - Continuous Drain (Id) at 25°C100mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On)4V,10V
Rds On (maximum value) when different Id, Vgs8 ohms @ 10mA, 4V
Vgs (th) (maximum value) when different Id1.5V @ 100µA
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)13pF @ 5V
FET function-
Power dissipation (maximum)150mW(Ta)
Operating temperature-55°C ~ 150°C(TA)
Installation typesurface mount
Supplier device packagingSOT-523
Package/casingSOT-523
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
2SK3019
Features
Lead Free Finish/RoHS Compliant ("P" Suffix
designates
RoHS Compliant. See ordering information)
Low ON-Resistance
Low voltage drive makes this device ideal for portable equipment
Fast Switching Speed
Easily designed drive circuits
Easy to parallel
Available in Lead Free/RoHS Compliant Version
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking:KN
Halogen
free available upon request by adding suffix "-HF"
N-Channel
Plastic-Encapsulate
Transistor
SOT-523
A
3
D
Mechanical Data
Case: SOT-523, Molded Plastic
Terminal Connections: See Diagram
1
B
C
1.GATE
2.SOURCE
3.DRAIN
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Parameter
Drain-Source-Voltage
Gate-Source-Voltage
Continuous Drain Current
Thermal Resistance,
Junction-to-Ambient
Total Power Dissipation
Symbol
V
DSS
V
GSS
I
D
R
thJA
Value
30
±20
0.1
833
o
2
E
Unit
V
V
A
C/W
G
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.059
.067
.030
.033
.057
.069
.020 Nominal
.035
.043
.000
.004
.028
.031
.004
.008
.010
.014
MM
MIN
MAX
1.50
1.70
0.75
0.85
1.45
1.75
0.50Nominal
0.90
1.10
.000
.100
.70
0.80
.100
.200
.25
.35
DIM
A
B
C
D
E
G
H
J
K
NOTE
P
D
150
mW
Equivalent circuit
www.mccsemi.com
Revision:
A
1 of 4
2014/06/24
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