Doc No.
TT4-EA-14660
Revision.
1
Product Standards
Schottky Barrier Diode
DB3Y501KEL
DB3Y501KEL
Silicon epitaxial planar type
For high speed switching circuits
DB3X501K in NMini3 type package
Features
Short reverse recovery time trr
Low terminal capacitance Ct
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
3
Unit : mm
2.9
0.4
0.13
Marking Symbol : 4H
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1
2
1.4
2.4
1.0
(0.95)(0.95)
1.9
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Reverse voltage
Repctitive peak reverse voltage
Forward current (Average)
Peak forward current
*1
Non-repetitive peak forward surge current
Junction temperature
Operating ambient temperature
Storage temperature
Note)
Rating
50
50
200
300
1
125
-40 to +85
-55 to +125
Unit
V
V
mA
mA
A
C
C
C
VR
VRRM
IF (AV)
IFM
IFSM
Tj
Topr
Tstg
Panasonic
JEITA
Code
1. Anode
2. N.C.
3. Cathode
NMini3-R1-B
SC-59A
TO-236AA/SOT-23
Internal Connection
3
*1 The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Electrical Characteristics Ta = 25
C
3
C
Parameter
Symbol
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
Note)
*1
1
2
Conditions
IF = 30 mA
IF = 200 mA
VR = 50 V
VR = 10 V, f = 1 MHz
IF = IR = 100 mA, Irr = 0.1
IR
RL = 100
Min
Typ
Max
0.36
0.55
200
Unit
V
V
A
pF
ns
VF1
VF2
IR
Ct
trr
4.0
1.6
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1000 MHz.
Bias Insertion Unit
Output Pulse
4. *1 trr measurement circuit
Input Pulse
(N-50BU)
Pulse Generator
(PG-10N)
R
S
= 50
Wave Form Analyzer
(SAS-8130)
R
i
= 50
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
I
rr
= 0.1
mA
= 10
IR
Page 1 of 3
Established : 2013-04-27
Revised
: ####-##-##
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