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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMT1
PNP general purpose double
transistor
Product data sheet
Supersedes data of 2001 Sep 25
2001 Nov 07
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
FEATURES
•
300 mW total power dissipation
•
Very small 1.6
×
1.2 mm ultra thin package
•
Self alignment during soldering due to straight leads
•
Replaces two SC-75/SC-89 packaged transistors on
same PCB area
•
Reduced required PCB area
•
Reduced pick and place costs.
APPLICATIONS
•
General purpose switching and amplification.
6
5
4
PEMT1
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
6
5
4
TR2
DESCRIPTION
PNP transistor pair in a SOT666 plastic package.
NPN complement: PEMX1.
MARKING
TYPE NUMBER
PEMT1
MARKING CODE
FF
1
Top view
TR1
2
3
MAM450
1
2
3
Fig.1 Simplified outline (SOT666) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Transistor mounted on an FR4 printed-circuit board.
total power dissipation
T
amb
≤
25
°C;
note 1
−
300
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
−50
−40
−5
−100
−200
−200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2001 Nov 07
2
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
V
CB
=
−30
V; I
E
= 0
V
CB
=
−30
V; I
E
= 0; T
j
= 150
°C
V
EB
=
−4
V; I
C
= 0
V
CE
=
−6
V; I
C
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA; note 1
V
CB
=
−12
V; I
E
= I
e
= 0; f = 1 MHz
V
CE
=
−12
V; I
C
=
−2
mA;
f = 100 MHz
−
−
−
120
−
−
100
−100
−10
−100
−
−200
2.2
−
PARAMETER
CONDITIONS
MIN.
MAX.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
notes 1 and 2
VALUE
416
PEMT1
UNIT
K/W
UNIT
nA
μA
nA
mV
pF
MHz
handbook, halfpage
400
MHB987
hFE
300
200
100
0
−10
−1
V
CE
=
−5
V.
−1
−10
−10
2
−10
3
IC (mA)
Fig.2
DC current gain as a function of collector
current; typical values.
2001 Nov 07
3
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
PACKAGE OUTLINE
PEMT1
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
S
Y S
HE
6
5
4
pin 1 index
A
1
e1
e
2
bp
3
w
M
A
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.6
0.5
b
p
0.27
0.17
c
0.18
0.08
D
1.7
1.5
E
1.3
1.1
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.3
0.1
w
0.1
y
0.1
OUTLINE
VERSION
SOT666
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
2001 Nov 07
4
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