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DF3A3.3FU(TE85L,F)

Description
TVS DIODE 1VWM USM
CategoryDiscrete semiconductor    diode   
File Size159KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

DF3A3.3FU(TE85L,F) Overview

TVS DIODE 1VWM USM

DF3A3.3FU(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Diode typeZENER DIODE
Maximum dynamic impedance130 Ω
Maximum operating temperature125 °C
Maximum power dissipation0.1 W
Nominal reference voltage3.3 V
surface mountYES
Maximum voltage tolerance6%
Working test current5 mA
Base Number Matches1
DF3A3.3FU
TOSHIBA Diodes for Protecting against ESD
DF3A3.3FU
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
100
125
−55
to 125
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
operating temperature/current/voltage, etc.) are within the
TOSHIBA
1-2P1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.006 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
V
R
=
1 V
V
R
= 0, f = 1 MHz
Test Condition
Min
3.1
Typ.
3.3
115
Max
3.5
130
20
Unit
V
Ω
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
30 kV
Criterion: No damage to device elements
Start of commercial production
2002-06
1
2014-03-01
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