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FDP8N50NZ / FDPF8N50NZ — N-Channel UniFET
TM
II MOSFET
October 2013
FDP8N50NZ / FDPF8N50NZ
500 V, 8 A, 850 m
Features
• R
DS(on)
= 770 m (Typ.) @ V
GS
= 10 V, I
D
= 4 A
• Low Gate Charge (Typ. 14 nC)
• Low C
rss
(Typ. 5 pF)
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
N-Channel UniFET
TM
II MOSFET
Description
UniFET
TM
II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also
provides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp
ballasts.
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
GD
S
G
TO-220
G
D
S
TO-220F
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
=
25
o
C)
o
C
Parameter
FDP8N50NZ FDPF8N50NZ
500
±25
o
Unit
V
V
- Continuous (T
C
= 25 C)
- Continuous (T
C
=
- Pulsed
8
4.8
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
130
1
300
32
122
8
13
10
8*
4.8*
32*
100
o
C)
A
A
mJ
A
mJ
V/ns
40.3
0.3
-55 to +150
W
W/
o
C
o
C
o
C
- Derate above 25
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
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