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FDPF5N50FT — N-Channel UniFET
TM
FRFET
®
MOSFET
November 2013
FDPF5N50FT
Features
N-Channel UniFET
TM
FRFET
®
MOSFET
500 V, 4.5 A, 1.55
Ω
Description
UniFET
TM
MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery
performance of UniFET FRFET
®
MOSFET has been enhanced
by lifetime control. Its trr is less than 100nsec and the reverse dv/
dt immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp
ballasts.
D
• R
DS(on)
= 1.25
Ω
(Typ.) @ V
GS
= 10 V, I
D
= 2.25 A
• Low Gate Charge (Typ. 11 nC)
• Low C
rss
(Typ. 5 pF)
• 100% Avalanche Tested
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
G
D
S
G
TO-220F
S
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
o
Parameter
FDPF5N50FT
500
±30
25
o
C)
100
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
4.5*
2.7*
18*
233
4.5
8.5
4.5
28
o
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
- Continuous (T
C
=
- Continuous (T
C
=
- Pulsed
- Derate Above 25 C
0.22
-55 to +150
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
C
C
*Drain current limited by maximum junction temperature
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MicroPython Open Source section
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